In-plant calibration and use of power transistors for process control of gamma and electron beam facilities

Influence of radiation energy on the response of a bipolar power transistor tested as dosimeter in radiation processing

“…Tests already conducted on this bipolar transistor showed the good performances of this device as routine dosimeter in high-activity g and highenergy, high-power electron beam facilities [3]. The overall uncertainties associated with the measurements of the response of the transistors irradiated under standard laboratory conditions were better than the 4% [2], while irradiation of the transistors in the industrial irradiation plants gave overall uncertainties associated with the measurements of the dosimeter response of 5.8% for g and 5% for electron irradiation at 95% level of confidence [3]. The precision of the dose measurement was 2.1% (1s) for irradiation in a 10 MeV electron beam facility and 4.5% (1s) in a 60 Co irradiation facility [3].…”

“…The overall uncertainties associated with the measurements of the response of the transistors irradiated under standard laboratory conditions were better than the 4% [2], while irradiation of the transistors in the industrial irradiation plants gave overall uncertainties associated with the measurements of the dosimeter response of 5.8% for g and 5% for electron irradiation at 95% level of confidence [3]. The precision of the dose measurement was 2.1% (1s) for irradiation in a 10 MeV electron beam facility and 4.5% (1s) in a 60 Co irradiation facility [3]. The stability of the response was checked over 1 year and no fading was found [4].…”

“…The use of high-energy electrons for charge carrier lifetime control in these devices has been widely investigated [1], and the fact that the change of all their static and dynamic electrical characteristics is proportional to the irradiation dose led us to investigate on the use of a commercial power transistor as routine dosimeter in radiation processing [2][3][4]. Those studies revealed that the device was capable of measuring doses from 0.1 up to 45 kGy, both in g-and electron-radiation fields.…”

Radiation Induced Defects in Bipolar Power Transistors: Influence of Radiation Energy

“…A low cost, small size commercial bipolar power transistor was investigated as possible routine radiation dosimeter in previous works [1,2]. Those studies revealed that the device was capable of measuring doses from 0.1 up to 45 kGy, both in γ and electron radiation fields.…”

Characterization of power transistors as high dose dosimeters

“…Considering that the reduction of the charge carrier lifetime is proportional to the irradiation dose, bipolar power transistors were tested, in previous works, as routine dosimeters under standard laboratory conditions [7], and in high-activity gamma and high-power electron beam facilities [8] with good results.…”