In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots

Li, Mi-Feng; Yu, Ying; He, Jinmei; Wang, Lijuan; Zhu, Yan; Shang, Xiangjun; Ni, Haiqiao; Niu, Zhichuan

doi:10.1186/1556-276x-8-86

Cited by 13 publications

(9 citation statements)

References 14 publications

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“…It consists of a 243 nm thick GaAs core layer on top of a 1500 nm thick Al 0.9 Ga 0.1 As cladding layer. The single layer of self-assembled In(Ga)As QDs is embedded in the core layer and was grown using the indium gradient growth method, 17 which guarantees a low QD density of ∼10 7 cm −2 optimized for the fabrication of single-QD devices with the emission wavelength ranging from 900 to 930 nm. To unify different coordinate systems during the marker-based deterministic device fabrication workflow, an array of metal square markers was patterned on the selected wafer area through an electron beam lithography (EBL)-based lift-off process.…”

Section: ■ Methodsmentioning

confidence: 99%

Scalable Deterministic Integration of Two Quantum Dots into an On-Chip Quantum Circuit

Yang

Schall

et al. 2023

ACS Photonics

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Integrated quantum photonic circuits (IQPCs) with deterministically integrated quantum emitters are critical elements for scalable quantum information applications and have attracted significant attention in recent years. However, scaling them up toward fully functional photonic circuits with multiple deterministically integrated quantum emitters to generate photonic input states remains a great challenge. In this work, we report on a monolithic prototype IQPC consisting of two preselected quantum dots deterministically integrated into nanobeam cavities at the input ports of a 2 × 2 multimode interference beam splitter. The on-chip beam splitter exhibits a splitting ratio of nearly 50/50 and the integrated quantum emitters have high single-photon purity, enabling on-chip Hanbury Brown and Twiss (HBT) experiments, depicting deterministic scalability. Overall, this marks a cornerstone toward scalable and fully functional IQPCs.

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Section: ■ Methodsmentioning

confidence: 99%

Scalable Deterministic Integration of Two Quantum Dots into an On-Chip Quantum Circuit

Yang

Schall

et al. 2023

ACS Photonics

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“…Dilute InAs QDs are grown in epitaxy on semi-insulating GaAs (001) substrates with a gradient indium flux and subcritical deposition amount [ 13 ] and integrated in a planar GaAs/Al 0.9 Ga 0.1 As DBR cavity with CM at 910~920 nm (Q~1300). As Figure 1 f indicates, QDs with no donor show a dominant X + from background p-impurity; hole traps induce a secondary X by a slow tunnel capture [ 14 ]; delicate modulated Si doping added above QDs populate dominant X and XX.…”

Section: Methodsmentioning

confidence: 99%

Single- and Twin-Photons Emitted from Fiber-Coupled Quantum Dots in a Distributed Bragg Reflector Cavity

Shang

Liu

et al. 2022

Nanomaterials

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In this work, we develop single-mode fiber devices of an InAs/GaAs quantum dot (QD) by bonding a fiber array with large smooth facet, small core, and small numerical aperture to QDs in a distributed Bragg reflector planar cavity with vertical light extraction that prove mode overlap and efficient output for plug-and-play stable use and extensive study. Modulated Si doping as electron reservoir builds electric field and level tunnel coupling to reduce fine-structure splitting (FSS) and populate dominant XX and higher excitons XX+ and XXX. Epoxy package thermal stress induces light hole (lh) with various behaviors related to the donor field: lh h1 confined with more anisotropy shows an additional XZ line (its space to the traditional X lines reflects the field intensity) and larger FSS; lh h2 delocalized to wetting layer shows a fast h2–h1 decay; lh h2 confined shows D3h symmetric higher excitons with slow h2–h1 decay and more confined h1 to raise h1–h1 Coulomb interaction.

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“…QDs were grown at a rate of 0.005 monolayer/s in As4 flux pressure of 1 × 10 −6 Torr at a nominal temperature (T) 540 °C. A sacrificed QD layer was grown first to monitor island by reflection high energy electron diffraction (RHEED) and determine the proper indium deposition amount [28,29] and then evaporated at 670 °C for 15 min until the point array in RHEED pattern disappeared (the residual indium atoms were removed). After a 80 nm GaAs capping at 580 °C to flatten the surface and space a possible defect introduced in the sacrificed layer, the formal QDs were grown without substrate rotation to yield gradient indium flux and QD density along [1-10] [30,31].…”

Section: Methodsmentioning

confidence: 99%

Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement

Shang

Liu

et al. 2021

Crystals

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The sacrificed-QD-layer method can well control the indium deposition amount to grow InAs quantum dots (QDs) with isotropic geometry. Individual Si dopant above an (001)-based InAs QD proves a new method to build a local electric field to reduce fine structure splitting (FSS = X1−X2) and show D3h symmetric excitons. The lowest FSS obtained is 3.9 μeV with the lowest energy X state (LX) anticlockwise rotate from [1−10] (i.e., zero FSS will be crossed in a proper field). The lateral field projection induces a large eh separation and various FSS, LX, and emission intensity polarization. The lateral field along [1−10] breaks the X1–X2 wavefunction degeneracy for independent HH and VV cascade emissions with robust polarization correlation. With FSS ~4 μeV and T1 ~0.3 ns fastened in a distributed Bragg reflector cavity, polarization-resolved XX–X cross-correlations show fidelity ~0.55 to a maximal entangled state |HH> + |VV>. A higher fidelity and zero FSS will be obtained in the hybrid QD structure with a junction field integrated to tune the FSS and a sub-bandgap excitation to avoid influences from electrons in the barrier.

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In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots

Cited by 13 publications

References 14 publications

Scalable Deterministic Integration of Two Quantum Dots into an On-Chip Quantum Circuit

Scalable Deterministic Integration of Two Quantum Dots into an On-Chip Quantum Circuit

Single- and Twin-Photons Emitted from Fiber-Coupled Quantum Dots in a Distributed Bragg Reflector Cavity

Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement

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