In situ annealing and high-rate silicon epitaxy on porous silicon by mesoplasma process

Abstract

By a mesoplasma process, a double-layer porous Si is annealed for a few seconds, by which an annealing effect similar to that of a prolonged conventional annealing process is obtained. The basic annealing process is considered to follow the classical sintering theory. However, the surface of the annealed porous Si is rough with large open voids because of H etching. The epitaxial Si films deposited on such a rough surface at a rate of 350 nm/s show a smooth surface with a low defect density compared with those deposited on a polished Si wafer, which clearly demonstrates the advantages of the cluster-assisted mesoplasma process.

Vibrational Properties and Raman Peak Shift Relationships in Si1−xGex Epilayers Grown on Annealed Double Porous Silicon

“…However, the Raman peak of DPSi shifts to a higher wave number at 523 cm −1 . This shift aligns with the relaxation of lattice expansion relaxation and the restructuring of porous morphology due to annealing [27], this change is linked to an increase in pore diameter, which was previously demonstrated in our earlier research [9]. The presence of an additional Raman peak observed at 514 cm -1 indicates the existence of a tensely strained layer in the thin PSi layer free of pores.…”

Fabrication of Crystalline Si Thin Films for Photovoltaics

“…[135] Therefore, porous and weak interfacial layers are essential for the transfer of epitaxial Si films. [80,[136][137][138][139][140][141][142][143][144][145][146][147][148][149][150] The most widely used method to achieve this is to grow the epitaxial Si on a porous Si. The porous Si layer transfer technology provides the opportunity to obtain monocrystalline films on lowcost substrates.…”