In-situ Ar plasma treatment as a low thermal budget technique for high performance InGaSnO thin film transistors fabricated using magnetron sputtering

Hu, Mengzhen; Xu, Lei; Zhang, Xinnan; Song, Zengcai; Luo, Shiming

doi:10.1016/j.apsusc.2022.154621

Cited by 13 publications

(1 citation statement)

References 45 publications

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“…Among the various amorphous oxide semiconductors, amorphous InGaZnO (IGZO) is the most widely used for TFTs because of its high mobility, low leakage current, and scalability for large areas [4][5][6][7]. Nevertheless, improving mobility and reducing the processing temperature for applications in high-resolution, large-area, and flexible displays and sensors are still necessary [8][9][10]. Recently, a new type of thin film, InGaSnO (IGTO), has been the subject of research owing to its potential for high mobility and low-temperature processing [8,11].…”

Section: Introductionmentioning

confidence: 99%

Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma

Joo

Choi

Hou

et al. 2023

Plasma Sci. Technol.

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Indium gallium tin oxide (IGTO) thin films have the potential for high mobility and low-temperature processing, which makes them suitable for applications such as display backplanes and high-voltage switching devices. However, very few studies have investigated the plasma-etching characteristics of IGTO and changes in its properties after etching. In this study, the etching characteristics of IGTO were investigated using Cl2/Ar plasma, and changes in surface properties were analyzed. Results showed that the etch rate increased with an increase in the proportion of Cl2, with the highest etch rate observed at 69 nm/min in pure Cl2 plasma with a gas flow rate of 100 sccm. Furthermore, increased radio-frequency power caused a rise in the etch rate, while a process pressure of 15 mTorr was optimal. The primary etching mechanism for IGTO thin films under Cl2 plasma was a chemical reaction, and an increased work function indicated the occurrence of defects on the surface. In addition, the etching process reduced the surface roughness of Cl2-containing plasma, whereas the etching process in pure Ar plasma increased surface roughness. This study contributes to a better understanding of the plasma-etching characteristics of IGTO and changes in its properties after etching, providing valuable insights for IGTO-based applications.

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Section: Introductionmentioning

confidence: 99%

Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma

Joo

Choi

Hou

et al. 2023

Plasma Sci. Technol.

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The impact of surface treatment on Al foil for Cu2ZnSnS4 thin films

Chen,

Fu,

Huang

et al. 2024

J Mater Sci: Mater Electron

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Review of Plasma Surface Engineering Technology Toward Sustainable Textile Materials

Ssekasamba,

Tebyetekerwa,

Haodong

et al. 2024

Mater Circ Econ

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In-situ Ar plasma treatment as a low thermal budget technique for high performance InGaSnO thin film transistors fabricated using magnetron sputtering

Cited by 13 publications

References 45 publications

Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma

Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma

The impact of surface treatment on Al foil for Cu2ZnSnS4 thin films

Review of Plasma Surface Engineering Technology Toward Sustainable Textile Materials

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In-situ Ar plasma treatment as a low thermal budget technique for high performance InGaSnO thin film transistors fabricated using magnetron sputtering

Cited by 13 publications

References 45 publications

Etching characteristics and surface modification of InGaSnO thin films under Cl2/Ar plasma

Etching characteristics and surface modification of InGaSnO thin films under Cl2/Ar plasma

The impact of surface treatment on Al foil for Cu2ZnSnS4 thin films

Review of Plasma Surface Engineering Technology Toward Sustainable Textile Materials

Contact Info

Product

Resources

About

Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma

Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma