2018
DOI: 10.1038/s41467-018-04610-0
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In situ atomistic insight into the growth mechanisms of single layer 2D transition metal carbides

Abstract: Developing strategies for atomic-scale controlled synthesis of new two-dimensional (2D) functional materials will directly impact their applications. Here, using in situ aberration-corrected scanning transmission electron microscopy, we obtain direct insight into the homoepitaxial Frank–van der Merwe atomic layer growth mechanism of TiC single adlayers synthesized on surfaces of Ti3C2 MXene substrates with the substrate being the source material. Activated by thermal exposure and electron-beam irradiation, hex… Show more

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Cited by 166 publications
(130 citation statements)
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“…treated Ti 3 AlC 2 with 40 % HF at room temperature and successfully etched the Al atomic layers by replacing them with surface groups (i.e., −OH, −F) to obtain Ti 3 C . In contrast, in the bottom‐up strategy, the target MXenes are directly grown from atoms or molecules . For instance, high‐quality and nanometer‐thin Mo 2 C crystals with large lateral size were synthesized by means of chemical vapor deposition (CVD) .…”
Section: Synthesis Strategies and Propertiessupporting
confidence: 71%
“…treated Ti 3 AlC 2 with 40 % HF at room temperature and successfully etched the Al atomic layers by replacing them with surface groups (i.e., −OH, −F) to obtain Ti 3 C . In contrast, in the bottom‐up strategy, the target MXenes are directly grown from atoms or molecules . For instance, high‐quality and nanometer‐thin Mo 2 C crystals with large lateral size were synthesized by means of chemical vapor deposition (CVD) .…”
Section: Synthesis Strategies and Propertiessupporting
confidence: 71%
“…Figure d presents the corresponding ED patterns that verify the preservation of the MXene structure up to 700 °C. At 750 °C, the ED patterns confirm the formation of TiC nanoplatelets with similar lattice spacing compared to Ti 3 C 2 (see Figure S2 in the Supporting Information). During the MXene exposure to H 2 , RGA detected the formation of H 2 O at 500 °C, which is increasing slightly with temperature (see Figure S3 in the Supporting Information).…”
mentioning
confidence: 62%
“…Widening of the interlayer gap may enable the penetration of molecular reactants such as urea, which decomposes readily and leads to the intercalation of ammonium cations 123 . ReaxFF simulations were performed for defect formation and homoepitaxial growth of TiC layer on Ti3C2 MXene structures 124 .…”
Section: For Details)mentioning
confidence: 99%