In situ cavity length control of GaN-based vertical-cavity surface-emitting lasers with in situ reflectivity spectra measurements

Nagasawa, Tsuyoshi; Kobayashi, Kenta; Watanabe, Ruka; Takeuchi, Tetsuya; Kamiyama, Satoshi; Sato, Kosuke; Kamei, Toshihiro

doi:10.35848/1347-4065/acdba9

Cited by 3 publications

(1 citation statement)

References 34 publications

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“…This means that precise growth control is critical for optimal performance. While there has been recent progress on in situ cavity length monitoring techniques for GaN VCSELs with epitaxial AlInN/GaN DBRs, 15) cavity length precision remains a pressing challenge for other GaN VCSEL architectures. Recently, long VCSEL cavities (L eff > 10 μm) have shown significant promise towards addressing the issues of thermal stability and cavity length control.…”

Section: Society Of Applied Physics By Iop Publishing Ltdmentioning

confidence: 99%

Demonstration of III-nitride vertical-cavity surface-emitting lasers with a topside dielectric curved mirror

Palmquist,

Kearns,

Gee

et al. 2023

Appl. Phys. Express

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We report long cavity (65λ) GaN-based vertical-cavity surface-emitting lasers (VCSELs) with a topside dielectric concave mirror, an ion implanted current aperture, and a bottomside nanoporous GaN distributed Bragg reflector. Under pulsed operation, a VCSEL with a 10 μm aperture and a curved mirror with a radius of curvature of 120 μm had a threshold current density of 14 kA cm−2, and a maximum output power of 370 μW for a lasing mode at 404.5 nm. The longitudinal performance has a side-mode suppression ratio of 30 dB up to a current density of approximately 40 kA cm−2. Multiple transverse mode profiles are observed across several devices.

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Section: Society Of Applied Physics By Iop Publishing Ltdmentioning

confidence: 99%

Demonstration of III-nitride vertical-cavity surface-emitting lasers with a topside dielectric curved mirror

Palmquist,

Kearns,

Gee

et al. 2023

Appl. Phys. Express

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In Situ Center Wavelength Control of AlInN/GaN Distributed Bragg Reflectors with In Situ Reflectivity Spectra Measurements

Kobayashi,

Nishikawa,

Watanabe

et al. 2024

Physica Status Solidi (b)

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An in situ control of a center wavelength in a 40‐pair AlInN/GaN distributed Bragg reflector (DBR) for GaN‐based vertical‐cavity surface‐emitting lasers (VCSELs) with an in situ reflectivity spectra measurement is proposed and developed. A procedure of the in situ control consists of the following three steps: 1) to grow an initial 5‐pair DBR; 2) to obtain the center wavelength value just after the initial DBR growth by the in situ reflectivity spectra measurement; and 3) to adjust growth times as a result of the obtained center wavelength value and continue the remaining 35‐pair DBR. It is experimentally demonstrated that the in situ control of the center wavelength in the 40‐pair DBRs with the ±2% thickness deviations in the initial 5‐pair DBR results in reductions of the deviation down to ±0.3%. The in situ DBR center wavelength control is a key technique for highly reproducible GaN‐based VCSELs.

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Over 20% wall plug efficiency of on-wafer GaN-based vertical-cavity surface-emitting laser

Watanabe,

Kobayashi,

Yanagawa

et al. 2024

Applied Physics Letters

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We demonstrated an over 20% wall plug efficiency of an on-wafer GaN-based vertical-cavity surface-emitting laser (VCSEL) with a 5 μm aperture. The cavity length of the VCSEL was 4λ optical length, containing a 3.7λ part of GaN-based layers controlled with an in situ reflectivity spectra measurement and a 0.3λ part of an ITO electrode and a Nb2O5 spacer layer adjusted with an ex situ measurement. In order to calibrate the thickness of ITO and N2O5, we directly evaluated resonance wavelength shifts of a 4λ GaN cavity test structure with additional ITO or N2O5 depositions on the cavity. We then fabricated GaN-based VCSELs with various aperture sizes from 5 to 20 μm by implementing the tuned ITO electrode and the tuned N2O5 spacer layer into the 4λ cavity of the VCSELs. The GaN-based VCSEL with an 8 μm aperture showed a light output power of 13.1 mW and an emission wavelength of 417.7 nm, which was only a 0.3 nm away from a designed wavelength.

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In situ cavity length control of GaN-based vertical-cavity surface-emitting lasers with in situ reflectivity spectra measurements

Cited by 3 publications

References 34 publications

Demonstration of III-nitride vertical-cavity surface-emitting lasers with a topside dielectric curved mirror

Demonstration of III-nitride vertical-cavity surface-emitting lasers with a topside dielectric curved mirror

In Situ Center Wavelength Control of AlInN/GaN Distributed Bragg Reflectors with In Situ Reflectivity Spectra Measurements

Over 20% wall plug efficiency of on-wafer GaN-based vertical-cavity surface-emitting laser

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