In-situ chamber clean for chromium etch application

Mao, Zhengzhong; Chen, Xiaoyi; Knick, David; Grimbergen, M.; Chandrahood, Madhavi; Ibrahim, Ibrahim; Kumar, Ajay

doi:10.1117/12.793080

Cited by 2 publications

(1 citation statement)

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“…chamber clean is developed to remove the by-product with resist in Cr etch. It is important to consider the effectiveness for chamber condition control and particle reduction [4] . Defect generation during MoSiON etching can be reduced with In-situ.…”

Section: Introductionmentioning

confidence: 99%

The novel plasma etching process for defect reduction in photomask fabrication

et al. 2009

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As the device design rule shrinks, photomask manufacturers need to have advanced defect controllability during the Cr and MoSi etch in the process of phase shift mask (PSM). In order to decrease the number of defects, which may be originated from the mechanical transferring, plasma ignition and cross-contamination of resist stripping or cleaning process, a novel plasma etching process was developed in a commercial photomask etcher. In this process named as the "In-situ. etching", Cr and Mosi is etched stepwise in a chamber. The In-situ. etching processes produce better defect level than that of the conventional process without deteriorating other mask quality such as CD performance, profile and process reproducibility.Particle generated by plasma ignition in in-situ. etching lead to defect which is an obstacle in Cr etch. Because plasma is stable from Cr etch to Mosi etch, no defect is added in Mosi etch. Furthermore quantitative analysis of by-products deposited and eroded by the chamber position shows that by-products are comprised of Al, chlorine, carbon. These byproducts can be removed by fluorine-containing plasma.

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Section: Introductionmentioning

confidence: 99%

The novel plasma etching process for defect reduction in photomask fabrication

et al. 2009

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Pseudo actinometry for the measurement of reactive species density

Kang

Jang

et al. 2017

Opt. Lett.

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To compensate for the effect of plasma parameters in the signal of optical emission spectroscopy, we should normalize the emission intensity from the species against that of an inert gas (i.e., the actinometer). In many plasma processes in the semiconductor industry, plasma etching without using a neutral gas for the actinometer has become popular to achieve better critical dimension uniformity. We propose "pseudo actinometry" for normalization in the absence of an inert gas in the process plasma. Based on the theory of optical actinometry, we define a correction factor as the ratio of the emission intensity to the number density of the inert gas. As we reduced the density of the inert gas, we experimentally determined the correction factor by taking its convergence when the concentration of the inert gas was zero. As proof of concept, we applied pseudo actinometry to measure the density distribution of atomic chlorine in a photomask etching process without an inert gas. By comparing the distributions of chlorine radicals and the etch rate as measured by an ellipsometer, we calculated the correlation coefficient between the distributions. The correlation coefficient rapidly decreased to 0.60 when we used the correction factor determined at a flow rate for the inert gas of 20 standard cubic centimeters per minute at STP. By using pseudo actinometry, we successfully determined the distribution of chlorine radicals with a correlation coefficient of 0.98 in a plasma etching process without an inert gas.

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In-situ chamber clean for chromium etch application

Cited by 2 publications

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The novel plasma etching process for defect reduction in photomask fabrication

The novel plasma etching process for defect reduction in photomask fabrication

Pseudo actinometry for the measurement of reactive species density

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