In situ characterization of cubic boron nitride film growth in the IR spectral region

Barth, Karl; Fukarek, W.; Maucher, H.-P; Plass, M.F.; Lunk, A.

doi:10.1016/s0040-6090(97)00980-2

Cited by 11 publications

(7 citation statements)

References 17 publications

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“…One usually finds that amorphous sp 2 -bonded BN of a few nm thickness exists in the region near to the interface to the substrate. In this region nanocrystalline h-BN or sub-modifications with less regular stacking order grow under conditions which shall induce the phase transition to c-BN for subsequently deposited material [6,[17][18][19][20]. Such deposition parameters force the film material to build up a biaxial compressive stress.…”

Section: Resultsmentioning

confidence: 99%

“…Typical discharge powers are a few kW, the substrate bias was -700 V. An analysis using transmission FTIR showed a layered film composition with a lower h-BN layer and an upper c-BN layer [5]. In a least squares fit to the measured spectrum the film thicknesses were determined with high accuracy (±2%) [6], yielding 7.5 nm (6.5 nm) h-BN and a total thickness of 123 nm (277 nm) for the thinner (thicker) film. A third c-BN film was deposited under similar conditions.…”

Section: Film Preparationmentioning

confidence: 99%

“…A third c-BN film was deposited under similar conditions. Its growth was controlled with in situ IR reflection spectroscopy [6]. The h-BN interface layer has a thickness of 30 ± 10 nm and the total film thickness is 600 ± 30 nm.…”

Section: Film Preparationmentioning

confidence: 99%

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Brillouin light scattering from surface phonons in hexagonal and cubic boron nitride films

Wittkowski

Cortina

Jorzick

et al. 2000

Diamond and Related Materials

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Phase velocities of surface acoustic waves in several boron nitride films were investigated by Brillouin light scattering. In the case of films with predominantly hexagonal crystal structure, grown under conditions close to the nucleation threshold of cubic BN, four independent elastic constants have been determined from the dispersion of the Rayleigh and the first Sezawa mode. The large elastic anisotropy of up to c 11 /c 33 = 0.1 is attributed to a pronounced texture with the c-axes of the crystallites parallel to the film plane. In the case of cubic BN films the dispersion of the Rayleigh wave provides evidence for the existence of a more compliant layer at the substrate-film interface. The observed broadening of the Rayleigh mode is identified to be caused by the film morphology.

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Section: Resultsmentioning

confidence: 99%

Section: Film Preparationmentioning

confidence: 99%

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Brillouin light scattering from surface phonons in hexagonal and cubic boron nitride films

Wittkowski

Cortina

Jorzick

et al. 2000

Diamond and Related Materials

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“…With the help of the code provided in the Supplemental Material of Ref. [66], we find that the binding energy for excitons comprising an electron at Q with a hole at K or for 2L-WSe 2 encapsulated in hexagonal boron nitride (ε hBN = 3.73 [68])…”

Section: H-wsementioning

confidence: 99%

Multifaceted moiré superlattice physics in twisted WSe2 bilayers

et al. 2021

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Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo-and ferroelectric moiré potentials for electrons and holes, as well as a modulation of the hybridization across the bilayer. Here, we develop hybrid k • p tight-binding models to describe electrons and holes in the relevant valleys of twisted TMD homobilayers with parallel (P) and antiparallel (AP) orientations of the monolayer unit cells. We apply these models to describe moiré superlattice effects in twisted WSe 2 bilayers, in conjunction with microscopic ab initio calculations, and considering the influence of encapsulation, pressure, and an electric displacement field. Our analysis takes into account mesoscale lattice relaxation, interlayer hybridization, piezopotentials, and a weak ferroelectric charge transfer between the layers, and it describes a multitude of possibilities offered by this system, depending on the choices of P or AP orientation, twist angle magnitude, and electron/hole valley.

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“…19,20 This layered film structure complicates the problem of deducing elastic constants from the experimental dispersion curves of surface phonons. Since the thicknesses, the mass densities, and the elastic tensors of the two layers enter the elastic boundary conditions, the solution to the equation of motion depends on a remarkable number of unknown parameters.…”

Section: Brillouin Light Scattering Study On the Elastic Properties Omentioning

confidence: 99%

Brillouin light scattering study on the elastic properties of thick sputtered c-BN films

Wittkowski

Jorzick

Jung

et al. 2002

Journal of Applied Physics

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The Brillouin light scattering technique is used to observe thermally excited acoustic phonons in backscattering geometry in a transparent, 1.8 m thick diode sputtered c-BN film. The Rayleigh mode at the film surface and the quasilongitudinal bulk mode were detected under various angles of light incidence. The angular dependent phase velocity of the bulk wave provides evidence for an elastic anisotropy of the film material. Complete descriptions of the elastic properties are presented, assuming either isotropic or hexagonal film symmetry. The reduction of the film stiffness in comparison to the single crystal and the origin of the elastic anisotropy of c 11 /c 33 Ϸ4/5, where c 11 and c 33 are the respective extensional stiffness constants parallel and perpendicular to the film, is discussed. Both effects are predominantly caused by sp 2 -bonded material and a structured film growth.

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In situ characterization of cubic boron nitride film growth in the IR spectral region

Cited by 11 publications

References 17 publications

Brillouin light scattering from surface phonons in hexagonal and cubic boron nitride films

Brillouin light scattering from surface phonons in hexagonal and cubic boron nitride films

Multifaceted moiré superlattice physics in twisted WSe2 bilayers

Brillouin light scattering study on the elastic properties of thick sputtered c-BN films

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