In-situ CMP copper endpoint control system

Allen, Ronald L.; Chen, C.; Trikas, T.; Lehman, K.; Shinagawa, R.; Bhaskaran, V.; Stephenson, B. M.; Watts, David K.

doi:10.1109/issm.2001.962997

Cited by 5 publications

(2 citation statements)

References 2 publications

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“…Recently, the eddy current method [11][12][13][14][15][16][17] for detecting copper film thickness has been used in industrial CMP. And research on the eddy current method in CMP process has been appeared in industry quarters.…”

Section: A Measurement Methodsmentioning

confidence: 99%

A reliable control system for measurement on film thickness in copper chemical mechanical planarization system

Zhao

et al. 2013

Review of Scientific Instruments

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In recent years, a variety of film thickness measurement techniques for copper chemical mechanical planarization (CMP) are subsequently proposed. In this paper, the eddy-current technique is used. In the control system of the CMP tool developed in the State Key Laboratory of Tribology, there are in situ module and off-line module for measurement subsystem. The in situ module can get the thickness of copper film on wafer surface in real time, and accurately judge when the CMP process should stop. This is called end-point detection. The off-line module is used for multi-points measurement after CMP process, in order to know the thickness of remained copper film. The whole control system is structured with two levels, and the physical connection between the upper and the lower is achieved by the industrial Ethernet. The process flow includes calibration and measurement, and there are different algorithms for two modules. In the process of software development, C++ is chosen as the programming language, in combination with Qt OpenSource to design two modules' GUI and OPC technology to implement the communication between the two levels. In addition, the drawing function is developed relying on Matlab, enriching the software functions of the off-line module. The result shows that the control system is running stably after repeated tests and practical operations for a long time.

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Section: A Measurement Methodsmentioning

confidence: 99%

A reliable control system for measurement on film thickness in copper chemical mechanical planarization system

Zhao

et al. 2013

Review of Scientific Instruments

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“…EPD technology is a big challenge of the CMP process [ 7 ], because in-situ EPD is difficult to perform under the actual process conditions [ 1 ]. At present, various EPD methods [ 5 , 8 , 9 , 10 , 11 , 12 , 13 , 14 ] have been proposed, such as optical reflectance, frictional force, pad temperature, Cu-ion concentration, and eddy current. In the self-developed CMP system, the eddy current method [ 13 ] has been used to develop independently an in-situ measurement module for detecting the Cu layer thickness variation [ 12 ].…”

Section: Introductionmentioning

confidence: 99%

Motor Power Signal Analysis for End-Point Detection of Chemical Mechanical Planarization

2017

Micromachines

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In the integrated circuit (IC) manufacturing, in-situ end-point detection (EPD) is an important issue in the chemical mechanical planarization (CMP) process. In the paper, we chose the motor power signal of the polishing platen as the monitoring object. We then used the moving average method, which was appropriate for in-situ calculation process and made it easy to code for software development, to smooth the signal curve, and then studied the signal variation during the actual CMP process. The results demonstrated that the motor power signal contained the end-point feature of the metal layer removal, and the processed signal curve facilitated the feature extraction and it was relatively steady before and after the layer transition stage. In addition, the motor power signal variation of the polishing head was explored and further analysis of time delay was performed.

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