2022
DOI: 10.1016/j.jhazmat.2022.129438
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In-situ constructed 2D/2D ZnIn2S4/Bi4Ti3O12 S-scheme heterojunction for degradation of tetracycline: Performance and mechanism insights

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Cited by 88 publications
(34 citation statements)
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“…We can see a lower shift of VBM from Ti0.95 to Ti1.05, and this is in line with the results obtained based on the DRS and the flat band potential measurement. The value of actual VBM will be skewed by the contact potential difference between the sample and the analyzer . Therefore, the actual VBM of samples should be revised according to the formula E NHE /V = Φ + x – 4.44 ( E NHE : standard electrode potential, Φ of 4.59 eV: the electron work function of the analyzer, x : the contact potentials between the sample and analyzer obtained directly from VBM-XPS). Therefore, we can conclude that the VBM values of Ti0.95, Ti1.00, and Ti1.05 are located at 2.31, 2.36, and 2.40 eV versus NHE, respectively.…”
Section: Results and Discussionmentioning
confidence: 99%
“…We can see a lower shift of VBM from Ti0.95 to Ti1.05, and this is in line with the results obtained based on the DRS and the flat band potential measurement. The value of actual VBM will be skewed by the contact potential difference between the sample and the analyzer . Therefore, the actual VBM of samples should be revised according to the formula E NHE /V = Φ + x – 4.44 ( E NHE : standard electrode potential, Φ of 4.59 eV: the electron work function of the analyzer, x : the contact potentials between the sample and analyzer obtained directly from VBM-XPS). Therefore, we can conclude that the VBM values of Ti0.95, Ti1.00, and Ti1.05 are located at 2.31, 2.36, and 2.40 eV versus NHE, respectively.…”
Section: Results and Discussionmentioning
confidence: 99%
“…33 However, the poor light stability, narrow photoabsorption range and low charge separation efficiency are important bottlenecks restricting its practical application. Researchers have successfully combined numerous materials such as Bi 4 Ti 3 O 12 , 34 g-C 3 N 4 , 35 ZnWO 4 , 36 and CeO 2 (ref. 37) with ZnIn 2 S 4 to construct S-scheme heterojunctions and applied them to various fields of photocatalysis.…”
Section: Introductionmentioning
confidence: 99%
“…This kind of electron transfer will lead to a decrease in electron density at the interface of CdS and an increase in electron density at the interface of SnS 2 , resulting in the potential difference between the two phases and the formation of the built-in electric field at the interface (the direction of the electric field is from CdS to SnS 2 ). 57 Moreover, the VB of CdS bends upward and the CB of SnS 2 bends downward. Under visible light irradiation, the built-in electric field can induce electron transfer from the SnS 2 conduction band to the CdS valence band.…”
Section: Resultsmentioning
confidence: 99%