2018
DOI: 10.1038/s41699-018-0069-z
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In situ control of graphene ripples and strain in the electron microscope

Abstract: We demonstrate control over the three-dimensional (3D) structure of suspended 2D materials in a transmission electron microscope. The shape of our graphene samples is measured from the diffraction patterns recorded at different sample tilts while applying tensile strain on the sample carrier. The changes in the shape of the pattern and in individual diffraction spots allow us to analyze both corrugations and strain in the lattice. Due to the significant effect of ripples and strain on the properties of 2D mate… Show more

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Cited by 20 publications
(18 citation statements)
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“…The peak-to-peak distances computed in this work are in good agreement with previous theoretical and experimental studies on rippled graphene, which reported the graphene roughness to be between 75.2 to 109.0 pm 55 . Thomsen et al 56 directly measured the freestanding graphene roughness (ripple amplitude) as about 1.14 Å using diffraction tilt analysis in the transmission electron microscope (TEM) method.…”
Section: Resultssupporting
confidence: 90%
“…The peak-to-peak distances computed in this work are in good agreement with previous theoretical and experimental studies on rippled graphene, which reported the graphene roughness to be between 75.2 to 109.0 pm 55 . Thomsen et al 56 directly measured the freestanding graphene roughness (ripple amplitude) as about 1.14 Å using diffraction tilt analysis in the transmission electron microscope (TEM) method.…”
Section: Resultssupporting
confidence: 90%
“…By simple geometrical analysis, we can derive quantitatively the distance-dependent height displacement and inclination angle from strain maps in GPA, as shown in Figure S1f When the distance between two endpoints (Lep) increases from ~3 nm ( Figure S1b) to ~10 nm ( Figure S1k), deformations between them decrease if one compares the results shown in Figure S1E-I with that in Figure S1o-r. As shown in Figure S1q, the mean inclination angle in line profile b (or c), corresponding to a 3.6 nm (or 2 nm) distance away from dislocation core is ~9.5° (10.9°). This value is comparable to that caused by the ripples in graphene, typically 5°~8° at room temperature 4,5 . And the height displacement is almost the same as the vicinity of dislocation in graphene (5−20 Å) 3 .…”
Section: Out-of-plane Warping In the Junction With The Same Orientatisupporting
confidence: 53%
“…angles and interior atomic arrangements) determine the mechanical, thermal, and electrical properties of 2D materials [2][3][4][5] . Thus, designing and tailoring GBs at atomic scale is one of the utmost goals for advancing fundamental research and industrial applications of 2D materials.…”
mentioning
confidence: 99%
“…The observed incoherent background is due to excitations of phonons in the membrane. While corrugations of the membrane would lead to an additional smearing of the diffraction orders as observed in electron microscopy [52], these can be reduced by strainengineering the membrane [53,54], and are not considered here. The angular resolution has been taken to be δj=200 μrad (FWHM), the initial energy resolution of the H beam is ΔE/E=1%, and coupling to the electronic system of graphene is accounted for by an additional broading of ΔE/E=5%.…”
Section: Realistic Diffraction Patternmentioning
confidence: 99%