1998
DOI: 10.1016/s0925-4005(98)00122-1
|View full text |Cite
|
Sign up to set email alerts
|

In situ control of the electrochemical gap height modification of a suspended gate field-effect transistor by capacitance–voltage measurement technique

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2002
2002
2014
2014

Publication Types

Select...
2
2

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(3 citation statements)
references
References 15 publications
0
3
0
Order By: Relevance
“…42 Nevertheless, MIS field effect transistors, Schottky, and heterojunction diodes can be used as chemical sensors, in which the conducting polymer acts as both the active semiconductor and the chemical-sensitive transducer element of the sensor structure. [2][3][4][5][6] …”
Section: Chemical Sensors Modified With Doped Ppymentioning
confidence: 99%
See 1 more Smart Citation
“…42 Nevertheless, MIS field effect transistors, Schottky, and heterojunction diodes can be used as chemical sensors, in which the conducting polymer acts as both the active semiconductor and the chemical-sensitive transducer element of the sensor structure. [2][3][4][5][6] …”
Section: Chemical Sensors Modified With Doped Ppymentioning
confidence: 99%
“…The combination of the properties make PPy particularly attractive for applications in intelligent gas sensors, in which the organic semiconductor PPy acts as both the active semiconductor and the chemical sensitive transducer element of the sensor structure. [2][3][4][5][6] However, it brings about a self-limitation of their use. Due to its sensitivity to various gases and vapors the selectivity is low, which is the most serious problem in the use of PPy for gas or vapor detection.…”
Section: Introductionmentioning
confidence: 99%
“…For a fixed gap FET, the gap distance between gate and substrate is filled with air and keeps constant. The fixed gap FET is sensitive to change in dielectric material, hence, the device is used for gas sensing or chemical sensing by detecting the change in dielectric constant [11][12][13][14][15][16]. In contrast, the gate position of the movable gate FET can be changed by the external force which is applicable for physical sensors such as accelerometers or pressure sensors [17][18][19][20][21].…”
Section: Introductionmentioning
confidence: 99%