A synthetic platform for industrially
applicable two-dimensional
(2D) semiconductors that addresses the paramount issues associated
with large-scale production, wide-range photosensitive materials,
and oxidative stability has not yet been developed. In this study,
we attained the 6 in. scale production of 2D SnSe semiconductors with
spatial homogeneity using a rational synthetic platform based on the
thermal decomposition of solution-processed single-source precursors.
The long-range structural and chemical homogeneities of the 2D SnSe
layers are manifested using comprehensive spectroscopic analyses.
Furthermore, the capability of the SnSe-based photodetectors for broadband
photodetection is distinctly verified. The photoresponsivity and detectivity
of the SnSe-based photodetectors are 5.89 A W–1 and
1.8 × 1011 Jones at 532 nm, 1.2 A W–1 and 3.7 × 1010 Jones at 1064 nm, and 0.14 A W–1 and 4.3 × 109 Jones at 1550 nm, respectively.
The minimum rise times for the 532 and 1064 nm lasers are 62 and 374
μs, respectively. The photoelectrical analysis of the 5 ×
5 SnSe-based photodetector array reveals 100% active devices with
95.06% photocurrent uniformity. We unequivocally validated that the
air and thermal stabilities of the photocurrent yielded from the SnSe-based
photodetector are determined to be >30 d in air and 160 °C,
respectively,
which are suitable for optoelectronic applications.