2021
DOI: 10.1016/j.tsf.2021.138591
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In situ ellipsometry monitoring of TiO2 atomic layer deposition from Tetrakis(dimethylamido)titanium(IV) and H2O precursors on Si and In

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Cited by 7 publications
(1 citation statement)
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“…On the other hand, ratio of refraction index and dielectric constant average values determined for both samples are practically independent of wavelength interval, being <n> Ox+SiO2/APTES /<n> Ox+SiO2/APTES/O 3 ~ 0.9 and <ε r > Ox+SiO2/APTES /<ε r > Ox+SiO2/APTES/O 3 ~ 0.8, proving evidence of surface effect difference associated to samples modification. Furthermore, the possibility of performing in - situ SE measurements during ALD deposition in both, custom-made and commercial devices, provides not only an accurate monitoring of the deposited film thickness and growth mechanisms, but also a powerful tool to determine film optical properties, including the possibility to tune at will some physical parameters of the samples such as the refraction index [ 64 , 65 , 66 ].…”
Section: Resultsmentioning
confidence: 99%
“…On the other hand, ratio of refraction index and dielectric constant average values determined for both samples are practically independent of wavelength interval, being <n> Ox+SiO2/APTES /<n> Ox+SiO2/APTES/O 3 ~ 0.9 and <ε r > Ox+SiO2/APTES /<ε r > Ox+SiO2/APTES/O 3 ~ 0.8, proving evidence of surface effect difference associated to samples modification. Furthermore, the possibility of performing in - situ SE measurements during ALD deposition in both, custom-made and commercial devices, provides not only an accurate monitoring of the deposited film thickness and growth mechanisms, but also a powerful tool to determine film optical properties, including the possibility to tune at will some physical parameters of the samples such as the refraction index [ 64 , 65 , 66 ].…”
Section: Resultsmentioning
confidence: 99%