In-situ fabricated amorphous silicon quantum dots embedded in silicon nitride matrix: Photoluminescence control and electroluminescence device fabrication

Meng, Linghai; Li, Shukun; Chen, Huanqing; Lei, Menglai; Yu, Guo; Wen, Peijun; Fu, Jianbo; Jiang, Shengxiang; Zong, Hua; Li, Dong; Hu, Xiaodong

doi:10.1016/j.jlumin.2023.119913

Journal of Luminescence

2023

DOI: 10.1016/j.jlumin.2023.119913

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In-situ fabricated amorphous silicon quantum dots embedded in silicon nitride matrix: Photoluminescence control and electroluminescence device fabrication

Linghai Meng,

Shukun Li,

Huanqing Chen

et al.

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2024

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Cited by 3 publications

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Room-temperature solution processed silicon nanocluster: Theory prediction and experiment achievement

Hou,

Li,

Wang

et al. 2024

Chemical Engineering Science

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Room-temperature solution processed silicon nanocluster: Theory prediction and experiment achievement

Hou,

Li,

Wang

et al. 2024

Chemical Engineering Science

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Temperature dependent radiative and non-radiative recombination lifetimes of luminescent amorphous silicon oxynitride systems

Zhang,

Liu,

Zhang

et al. 2024

Front. Phys.

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In our previous work, we deeply researched the absolute photoluminescence (PL) quantum yields of luminescent modulating a-SiNxOy films with various N/Si atom ratios under different measurement temperatures. In this work, we further systematically studied the temperature dependent kinetic processes of radiative and non-radiative recombinations in a-SiNxOy systems in the visible light range. First, we investigated the structure of a-SiNxOy films and obtained the concentrations of both trivalent Si and N-Si-O defects related dangling bonds through XPS, FTIR and EPR measurements. Then we further tested the transient fluorescence attenuation of a-SiNxOy films detected at different emission wavelengths. We found that the PL lifetimes of a-SiNxOy films vary with the change of N-Si-O defect state concentrations, which is different from the typical PL decay characteristics of band tail related a-SiNx films previously reported. By combining the resulting PL IQE values with the ns-PL lifetimes, we further intensively redetermined the radiative and non-radiative recombination lifetimes of a-SiNxOy systems. The related radiative recombination rates were obtained (kr∼108 s−1), which can be compared to the results in the direct band gap.

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Interface and Size Effects of Amorphous Si/Amorphous Silicon Oxynitride Multilayer Structures on the Photoluminescence Spectrum

Song,

Wang

2024

Coatings

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A room-temperature photoluminescence (PL) study of amorphous Si/amorphous silicon oxynitride multilayer films prepared by plasma-enhanced chemical vapor deposition is reported. The PL peak position can be tuned from 800 nm to 660 nm by adjusting the oxygen/nitride ratio in the a-SiOxNy:H sublayer. The Fourier transform infrared (FTIR) absorption spectra indicate that the shift of the PL peak position is accompanied by an increase in the Si-O-Si absorption peak’s intensity, which induces the structural disorder at the interface, resulting in an increase in band gap energy. The effects of size on the photoluminescence spectrum have been studied. As a result, it has been observed that the addition of oxygen atoms introduces a large number of localized states at the interface, causing a blue shift in the emission peak position. With an increase in oxygen atoms, the localized states tend to saturate, and the quantum phenomenon caused by the a-Si sublayer becomes more pronounced. It is found that, as the thickness of the a-Si sublayer decreases, the increase in the [O/N] ratio is more likely to cause an increase in disordered states, leading to a decrease in luminescence intensity. For a-Si/a-SiOxNy:H samples with thinner a-Si sublayers, an appropriate value of [O/N] is required to achieve luminescence enhancement. When the value of [O/N] is one, the enhanced luminescence is obtained. It is also suggested that the PL originates from the radiative recombination in the localized states’ T3- level-related negatively charged silicon dangling bond in the band tail of the a-Si:H sublayer embedded in an a-Si/a-SiOxNy:H multilayer structure.

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In-situ fabricated amorphous silicon quantum dots embedded in silicon nitride matrix: Photoluminescence control and electroluminescence device fabrication

Cited by 3 publications

References 45 publications

Room-temperature solution processed silicon nanocluster: Theory prediction and experiment achievement

Room-temperature solution processed silicon nanocluster: Theory prediction and experiment achievement

Temperature dependent radiative and non-radiative recombination lifetimes of luminescent amorphous silicon oxynitride systems

Interface and Size Effects of Amorphous Si/Amorphous Silicon Oxynitride Multilayer Structures on the Photoluminescence Spectrum

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