In situ FT-IR and photoluminescence study of porous silicon during exposure to F2, H2O, and D2O

Strong enhancement and long-time stabilization of porous silicon photoluminescence by laser irradiation

“…In Fig. 3 large transmittance peaks at 625, 911 and 1110 cm À1 that are assigned to Si-H bending [9], Si-H 2 scissors and Si-O-Si stretching modes [9][10][11][12], respectively. A small peak at 680 cm À1 due to Si-H 2 wagging mode [9] is also observed.…”

On-site fabrication and charge–discharge property of TiO2 coated porous silicon electrode by the liquid phase deposition with anodic oxidation

“…5 shows the FT-IR spectra for PSi anodized at 300-500 mV vs. Ag/AgCl after the LPD reaction in H 2 TiF 6 /H 2 O/EtOH solution. The three absorption bands at around 2100 cm À1 observed for all the samples are assigned to the SiH 3 (2137 cm À1 ), SiH 2 (2113 cm À1 ), and SiH (2086 cm À1 ) stretching modes, and the absorption band at 908 cm À1 is assigned to the SiH 2 bending mode [31][32][33]. A weak n SiO 2 absorption band at 1878 cm À1 and stretching vibration of the Si-O-Ti 4+ structure at 940 cm À1 which were arrowed in Fig.…”

Metal Oxide Coated Porous Silicon Electrode Fabricated by Anodized Liquid Phase Depositions

“…SiH (2086 cm -1 ) stretching mode, and the absorption band at about 908 cm -1 can be assigned to SiH 2 bending mode (14)(15)(16). On the other hand, the very weak ν SiO2 absorption band (1878 cm -1 ) and the stretching vibration of Si-O-Ti 4+ bond structure (940 cm -1 ) were also observed in nanocomposites (17).…”