In‐situ growth condition analysis of AlN interlayers for wafer curvature control in GaN MOVPE on Si (111)

Liu, Cai; Kumamoto, Akihito; Sodabanlu, Hassanet; Sugiyama, Masakazu; Nakano, Yoshiaki

doi:10.1002/pssc.201300528

Cited by 5 publications

(4 citation statements)

References 7 publications

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“…Note that the XRD FWHM could be affected by the wafer curvature of GaN on Si. 19) To further observe the dislocation density of these GaN films, CL measurement was performed on these GaN films at room temperature with an acceleration voltage of 5 kV. Dislocations or clusters of dislocations at the surface of each GaN film were indicated by dark spots in the intensity map of GaN band edge luminescence.…”

mentioning

confidence: 99%

Initial growth control of GaN on Si with physical-vapor-deposition-AlN seed layer for high-quality GaN templates

Wang

Sodabanlu

Daigo

et al. 2016

Appl. Phys. Express

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An ex situ AlN seed layer was formed by physical vapor deposition (PVD) on a Si substrate, aiming at the production of high-quality GaN on Si by metal–organic vapor-phase epitaxy. A low density of initial GaN islands were obtained by reducing the trimethylgallium (TMGa) flow rate. The dislocation density of GaN was dramatically reduced with 3D growth compared with 2D growth, as indicated by measurements of XRD rocking curves (FWHM of 384 and 461 arcsec for 0002 and diffractions, respectively) and cathodoluminescence (CL) mapping (dark-spot density of 3.4 × 108 cm−2) for 1-µm-thick crack-free GaN on a Si substrate. The values were almost equivalent to those of the layers grown on sapphire substrates.

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mentioning

confidence: 99%

Initial growth control of GaN on Si with physical-vapor-deposition-AlN seed layer for high-quality GaN templates

Wang

Sodabanlu

Daigo

et al. 2016

Appl. Phys. Express

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“…Since the pyramidal growth of initial islands is regarded as an effective way of reducing edge dislocation density, 32,33) partial coalesced initial growth conditions in Figs. 3(a), 3(b), and 3(f) were chosen for the 3-µm-thick GaN epitaxial growth.…”

Section: Resultsmentioning

confidence: 99%

Effect of initial growth on the quality of GaN on patterned sapphire substrate with ex situ physical vapor deposition AlN seed layer

Wang¹,

Daigo²,

Seino³

et al. 2016

Jpn. J. Appl. Phys.

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GaN epitaxy was explored on a cone-patterned sapphire substrate with an ex situ AlN seed layer prepared by physical vapor deposition (PVD). The effect of initial growth on the quality of the GaN epilayer was investigated using both ex situ PVD-AlN seed layers with various thicknesses and various deposition parameters such as temperature and reactor pressure in metal–organic vapor-phase epitaxy (MOVPE). It was found that the quality of GaN is insensitive to both the thickness of the ex situ PVD-AlN seed layer and the MOVPE growth conditions. A high-quality GaN film was realized, as indicated by room-temperature CL mapping (dark spot density of 1.6 × 108 cm−2), on a patterned sapphire substrate with a wide growth condition window by simply employing an ex situ PVD-AlN seed layer.

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“…The capability of inducing compressive stress in GaN by ILs is dominantly dependent on their lattice constant, film crystal quality and interface quality. ILs with small lattice constant, laterally continuous film, relaxed lower interface and coherent upper interface could induce high compressive stress in overlying GaN [25]. For low-temperature ILs grown at 600 °C and 750 °C, the lattice constant was small but of deteriorated crystal quality.…”

Section: Effect Of Mild Hydrogen Etching On Stress Controlmentioning

confidence: 99%

Effects of hydrogen etching on stress control in AlN interlayer inserted GaN MOVPE on Si

Liu

Kumamoto

Suzuki

et al. 2017

Semicond. Sci. Technol.

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Clarification and control of the hydrogen etching of GaN is essential to achieving high-quality GaN-on-Si virtual substrates and devices based on it produced by metalorganic vapor phase epitaxy. This phenomenon and its effects on GaN-on-Si stress control were studied in this work. Without deliberate protection, voids with lateral sizes on the micrometre level underneath AlN interlayers emerged in GaN. Such voids made stress balancing in GaN-on-Si systems by inserting AlN interlayers less efficient. By flowing a protective large flow rate of ammonia, voids were eliminated while GaN decomposition still happened, which led to AlGaN alloy in the interlayers. Interfaces of Ga incorporated AlN interlayers grown under large-scale varied conditions were characterised by scanning transmission electron microscopy and energy dispersive spectrometry. Higher growth temperatures caused more Ga in the interlayers and weakened their capacity to induce compressive stress in the overlying GaN.

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In‐situ growth condition analysis of AlN interlayers for wafer curvature control in GaN MOVPE on Si (111)

Cited by 5 publications

References 7 publications

Initial growth control of GaN on Si with physical-vapor-deposition-AlN seed layer for high-quality GaN templates

Initial growth control of GaN on Si with physical-vapor-deposition-AlN seed layer for high-quality GaN templates

Effect of initial growth on the quality of GaN on patterned sapphire substrate with ex situ physical vapor deposition AlN seed layer

Effects of hydrogen etching on stress control in AlN interlayer inserted GaN MOVPE on Si

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