In situ growth of a TiO₂ layer on a flexible Ti substrate targeting the interface recombination issue of BiVO₄ photoanodes for efficient solar water splitting

Abstract

In situ growth of a TiO2 layer targeting the substrate interface recombination issue of BiVO4 photoanodes for efficient solar water splitting.

Spectroelectrochemical and Chemical Evidence of Surface Passivation at Zinc Ferrite (ZnFe2O4) Photoanodes for Solar Water Oxidation

“…[ 3–5 ] However, these materials are prone to a high degree of recombination at the reactive interface, [ 6–9 ] which ultimately limits the photovoltage generated and hence, the photocurrent onset potential ( V on ) obtained, therefore urgently demanding for new strategies to heal this interface. Indeed, several surface passivation routes, involving Ga 2 O 3 , [ 10 ] Al 2 O 3 , [ 11 ] SiO 2 , [ 12 ] and TiO 2 [ 13 ] coatings, have been so far described for well‐established photoanode materials such as α‐Fe 2 O 3 and BiVO 4 .…”

Twin Structure in BiVO4 Photoanodes Boosting Water Oxidation Performance through Enhanced Charge Separation and Transport

“…Solution mediated interface recombination through back reduction on exposed FTO has been considered as a non‐negligible energy loss process during PEC water splitting . As shown in Figure S2 (Supporting Information), the prepared BVO films via “one‐step” method were discontinuous films, where the underlying FTO is clearly exposed to the solution.…”

Atomic Layer Deposition of Space‐Efficient SnO2 Underlayers for BiVO4 Host–Guest Architectures for Photoassisted Water Splitting

“…[67] PEC measurements were performed in 1 m potassium borate with 0.2 m sodium sulfite (Na 2 SO 3 )a sh ole scavenger at pH 9. 35. It has been well established that potassium phosphate buffers dissolve BiVO 4 at working pH values; [4,68,69] however,B iVO 4 photoanodes are stable in alkaline borate buffers.…”

“…materials like BiVO 4 ,t he underlayer is sometimes called ah ole blockingl ayer or a" hole mirror." [6,[19][20][21][22][23][24][25] Previous works have commonlyutilized tin oxide (SnO 2 ) [2, 14, 29-32, 19, 21-23, 25-28] and tungsten oxide (WO 3 ), [3,26,33] where SnO 2 is perhaps the most studied underlayer material for BiVO 4 .O ther materials that have been used as interfacial layers in BiVO 4 photoanodes include TiO 2 , [34,35] Lu 2 O 3 , [20] and GaO x N 1-x ; [36] SnO 2 was selected for this study based on its suitable band alignment relative to BiVO 4 , stability, low cost, and as-yet unexplored investigation as a BiVO 4 underlayer using atomic layer deposition (ALD). Popular synthetic methods forS nO 2 ,s uch as spray pyrolysis, yield optimal PEC performance with 65-80nmo fu nderlayer thickness.…”