In Situ Growth of Graphene Catalyzed by a Phase‐Change Material at 400 °C for Wafer‐Scale Optoelectronic Device Application

Hu, Liangchen; Dong, Yibo; Xie, Yiyang; Qian, Fengsong; Chang, Pengying; Fan, Mengqi; Deng, Jun; Xu, Chen

doi:10.1002/smll.202206738

Cited by 4 publications

(4 citation statements)

References 58 publications

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Section: Introductionmentioning

confidence: 99%

“…[33,34] During the transfer procedure, loss of substrate material and the introduction of defects, wrinkles, cracks, and contaminations are unavoidable, resulting in a significant decline in the performance of graphene-based nanoscale electronic devices. [35][36][37][38][39] To avoid these issues during layer transfer, research efforts on promoting transfer-free approaches for the direct synthesis of layer-tunable graphene on device-bound substrates become increasingly important and urgent. [40] In this work, we use a reverse-order Janus substrate (Cu-coated Ni on an arbitrary substrate) instead of the Ni-coated Cu in our previous ion implantation work [32] to achieve both layer-tunability and transfer-free characteristics.…”

Section: Introductionmentioning

confidence: 99%

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Direct Synthesis of Layer‐Tunable and Transfer‐Free Graphene on Device‐Compatible Substrates Using Ion Implantation Toward Versatile Applications

Wang,

Jiang,

Baldwin

et al. 2024

Energy & Environ Materials

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Direct synthesis of layer‐tunable and transfer‐free graphene on technologically important substrates is highly valued for various electronics and device applications. State of the art in the field is currently a two‐step process: a high‐quality graphene layer synthesis on metal substrate through chemical vapor deposition (CVD) followed by delicate layer transfer onto device‐relevant substrates. Here, we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual‐metal smart Janus substrate for a diffusion‐limiting graphene formation to directly synthesize large area, high quality, and layer‐tunable graphene films on arbitrary substrates without the post‐synthesis layer transfer process. Carbon (C) ion implantation was performed on Cu–Ni film deposited on a variety of device‐relevant substrates. A well‐controlled number of layers of graphene, primarily monolayer and bilayer, is precisely controlled by the equivalent fluence of the implanted C‐atoms (1 monolayer ~4 × 1015 C‐atoms/cm2). Upon thermal annealing to promote Cu‐Ni alloying, the pre‐implanted C‐atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C‐solubility in Cu. As a result, the expelled C‐atoms precipitate into a graphene structure at the interface facilitated by the Cu‐like alloy catalysis. After removing the alloyed Cu‐like surface layer, the layer‐tunable graphene on the desired substrate is directly realized. The layer‐selectivity, high quality, and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene films. Molecular dynamics (MD) simulations using the reactive force field (ReaxFF) were performed to elucidate the graphene formation mechanisms in this novel synthesis approach. With the wide use of ion implantation technology in the microelectronics industry, this novel graphene synthesis approach with precise layer‐tunability and transfer‐free processing has the promise to advance efficient graphene‐device manufacturing and expedite their versatile applications in many fields.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Direct Synthesis of Layer‐Tunable and Transfer‐Free Graphene on Device‐Compatible Substrates Using Ion Implantation Toward Versatile Applications

Wang,

Jiang,

Baldwin

et al. 2024

Energy & Environ Materials

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show abstract

“…Additionally, the transfer process can degrade the intrinsic physical properties of graphene [ 12 ]. To overcome these challenges, researchers are actively seeking a transfer-free in situ preparation method for graphene on dielectric substrates [ 13 , 14 , 15 ] that is effectively compatible with semiconductor device integrated fabrication processes and that has reached different electronic device applications, including Schottky photodetector array [ 16 ], quantum Hall device [ 17 ], and electrochromic device [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

Two-Step Thermal Transformation of Multilayer Graphene Using Polymeric Carbon Source Assisted by Physical Vapor Deposited Copper

Huang

Shi

et al. 2023

Materials

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Direct in situ growth of graphene on dielectric substrates is a reliable method for overcoming the challenges of complex physical transfer operations, graphene performance degradation, and compatibility with graphene-based semiconductor devices. A transfer-free graphene synthesis based on a controllable and low-cost polymeric carbon source is a promising approach for achieving this process. In this paper, we report a two-step thermal transformation method for the copper-assisted synthesis of transfer-free multilayer graphene. Firstly, we obtained high-quality polymethyl methacrylate (PMMA) film on a 300 nm SiO2/Si substrate using a well-established spin-coating process. The complete thermal decomposition loss of PMMA film was effectively avoided by introducing a copper clad layer. After the first thermal transformation process, flat, clean, and high-quality amorphous carbon films were obtained. Next, the in situ obtained amorphous carbon layer underwent a second copper sputtering and thermal transformation process, which resulted in the formation of a final, large-sized, and highly uniform transfer-free multilayer graphene film on the surface of the dielectric substrate. Multi-scale characterization results show that the specimens underwent different microstructural evolution processes based on different mechanisms during the two thermal transformations. The two-step thermal transformation method is compatible with the current semiconductor process and introduces a low-cost and structurally controllable polymeric carbon source into the production of transfer-free graphene. The catalytic protection of the copper layer provides a new direction for accelerating the application of graphene in the field of direct integration of semiconductor devices.

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“…[24][25] During the transfer procedure, loss of substrate material and the introduction of defects, wrinkles, cracks, and contaminations are unavoidable, resulting in a significant decline in the performance of graphene-based nanoscale electronic devices. [26][27]29] To avoid these issues during layer transfer, research efforts on promoting transfer-free approaches for the direct synthesis of layer-tunable graphene on devicebound substrates become increasingly important and urgent.…”

Section: Introductionmentioning

confidence: 99%

Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation

Wang,

Jiang,

Baldwin

et al. 2023

Preprint

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Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device applications. Here, we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation, to directly synthesize layer-tunable graphene on arbitrary substrates without the post-synthesis layer transfer process. C ion implantation was performed on Cu-Ni film deposited on a variety of device-relevant substrates. Upon thermal annealing to promote Cu-Ni alloying, the pre-implanted C-atoms in the Ni layer are pushed towards the Ni/substrate interface by the top Cu layer due to the poor C-solubility in Cu. As a result, the expelled C-atoms precipitate into graphene structure at the interface facilitated by the Cu-like alloy catalysis. After removing the alloyed Cu-like surface layer, the layer-tunable graphene on the desired substrate is directly realized. ReaxFF was performed to elucidate the graphene formation mechanisms in this novel synthesis approach. Three ordinary devices using as-synthesized graphene were fabricated on Si, SiO2, and glass substrates to demonstrate the graphene quality of our layer-tunable and transfer-free synthesis approach and the excellent performance characteristics of these low-cost manufacturing devices: field-effect transistors, heating devices, and near-infrared photodetectors.

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In Situ Growth of Graphene Catalyzed by a Phase‐Change Material at 400 °C for Wafer‐Scale Optoelectronic Device Application

Abstract: The data that support the findings of this study are available from the corresponding author upon reasonable request.

Cited by 4 publications

References 58 publications

Direct Synthesis of Layer‐Tunable and Transfer‐Free Graphene on Device‐Compatible Substrates Using Ion Implantation Toward Versatile Applications

Direct Synthesis of Layer‐Tunable and Transfer‐Free Graphene on Device‐Compatible Substrates Using Ion Implantation Toward Versatile Applications

Two-Step Thermal Transformation of Multilayer Graphene Using Polymeric Carbon Source Assisted by Physical Vapor Deposited Copper

Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation

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