In situ growth of metal-sulfide film with solvent-free element-direct reaction: the case of PbS on ITO

Abstract

In order to prevent the metal-sulfide film from falling off a substrate during in situ preparation, a solvent-free element-direct reaction was developed.

Innovative solvent-free compound-direct synthesis of defect-rich ultra-thin NiS nanosheets for high-performance supercapacitors

“…11 Then, the direct reaction between elements was used for the preparation of energy storage and conversion materials. 12,13 To facilitate the control of the microstructure and uniformity of the target materials, this strategy is mainly based on the vertical in situ growth of the sheet substrate to obtain thin film materials, which is more suitable for the gassolid reaction. 14 Under its inspiration, the sulfur sources that can be vaporized or decomposed into sulfur-containing gases are an ideal choice.…”