2019
DOI: 10.1016/j.apcatb.2018.09.062
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In-situ hydrogenation engineering of ZnIn2S4 for promoted visible-light water splitting

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Cited by 120 publications
(47 citation statements)
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“…However, the Raman bands in M 0.2 ‐ZIS assigned to LO 1 , TO 2 , LO 2 , and A 1g shift to 261, 303, 347, and 387 cm −1 , and all the peaks are comparatively weaker, indicating a decreasing crystalline symmetry compared with that of pristine ZIS [21g]. While for M 3 ‐ZIS the peaks at 257 cm −1 disappear, and the peaks at 304, 350, and 387 cm −1 can hardly be observed, which may be due to the doping effect and poor crystallinity …”
Section: Resultsmentioning
confidence: 94%
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“…However, the Raman bands in M 0.2 ‐ZIS assigned to LO 1 , TO 2 , LO 2 , and A 1g shift to 261, 303, 347, and 387 cm −1 , and all the peaks are comparatively weaker, indicating a decreasing crystalline symmetry compared with that of pristine ZIS [21g]. While for M 3 ‐ZIS the peaks at 257 cm −1 disappear, and the peaks at 304, 350, and 387 cm −1 can hardly be observed, which may be due to the doping effect and poor crystallinity …”
Section: Resultsmentioning
confidence: 94%
“…Figure S7, Supporting Information, shows Raman spectra of ZIS and M x ‐ZIS. For ZIS, four Raman peaks around 257, 305, 343, and 379 cm −1 are attributed to the longitudinal optical mode (LO 1 ), transverse optical mode (TO 2 ), longitudinal optical mode (LO 2 ), and A 1g mode of crystalline ZIS, respectively . However, the Raman bands in M 0.2 ‐ZIS assigned to LO 1 , TO 2 , LO 2 , and A 1g shift to 261, 303, 347, and 387 cm −1 , and all the peaks are comparatively weaker, indicating a decreasing crystalline symmetry compared with that of pristine ZIS [21g].…”
Section: Resultsmentioning
confidence: 96%
“…The defects could be introduced into the semiconductors by plasma etching as a promising strategy . For example, as‐synthesized In 2 O 3− x /In 2 S 3 layers with OVs were fabricated by plasma treatment (Figure ).…”
Section: Strategies For Defects Generationmentioning
confidence: 99%
“…Oxygen‐ vacancies‐confined in TiO 2 crystals were produced through Ar plasma etching strategy, enhancing charge separation and promoting PC performance of water splitting . Moreover, the defects could also be introduced into the nanomaterials through a liquid‐ammonia‐assisted lithiation strategy . For example, sulfur‐vacancies‐confined in ZnIn 2 S 4 (V s ‐ZnIn 2 S 4 ) nanosheets were fabricated through a lithiation‐chemistry approach (Figure ), manipulating the electronic structure and the PC performance of defective ZnIn 2 S 4 nanosheets.…”
Section: Strategies For Defects Generationmentioning
confidence: 99%
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