2021
DOI: 10.1007/s00170-021-07278-x
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In situ investigation of nanometric cutting of 3C-SiC using scanning electron microscope

Abstract: Experimentally revealing the nanometric deformation behavior of 3C-SiC is challenging due to its ultra-small feature size for brittle-to-ductile transition. In the present work, we elucidated the nanometric cutting mechanisms of 3C-SiC by performing in-situ nanometric cutting experiments under scanning electron microscope (SEM), as well as post-characterization by electron back-scattered diffraction (EBSD) and transmission electron microscopy (TEM). In particular, a new method based on the combination of image… Show more

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Cited by 17 publications
(9 citation statements)
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“…Their results suggest that, the deformation behavior of cutting depends on the existence of a different phase within SiC [16]. This is also confirmed in the atomistic study of Liu et al [17,18], as well as in the experimental study of Tian et al [19], where the formation of a thin amorphous phase is observed. Although the formation of an amorphous phase is observed during molecular dynamics simulations and experiment, the typical thickness of such an amorphous layer is rather small, and this phase is metastable with respect to the ground state of SiC [20].…”
Section: Introductionsupporting
confidence: 58%
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“…Their results suggest that, the deformation behavior of cutting depends on the existence of a different phase within SiC [16]. This is also confirmed in the atomistic study of Liu et al [17,18], as well as in the experimental study of Tian et al [19], where the formation of a thin amorphous phase is observed. Although the formation of an amorphous phase is observed during molecular dynamics simulations and experiment, the typical thickness of such an amorphous layer is rather small, and this phase is metastable with respect to the ground state of SiC [20].…”
Section: Introductionsupporting
confidence: 58%
“…It is noted here that the constitutive model used in this work does not cover phase transformations that might occur in the material. In particular, atomistic studies show that a phase transformation to the amorphous phase may occur under the high pressure caused by the machining process of SiC [10,16,17,19,20]. However, this amorphous layer is typically very thin and would be smaller than the element size in our simulations.…”
Section: Constitutive Model For 3c-sicmentioning
confidence: 95%
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“…At present, a great number of experiments [5][6][7][8] and simulations [9][10][11][12][13] have been carried out to investigate the deformation mechanisms of 3C-SiC. For instance, Mishra et al performed large-scale molecular dynamics (MD) simulations of nanoindentation and found that the primary deformation mechanisms of 3C-SiC are dislocation nucleation and propagation in the low pressure (zincblende) phase [11].…”
Section: Introductionmentioning
confidence: 99%
“…Оптическая спектроскопия является одним из мощнейших инструментов, применяемых в химических и физических науках для изучения структуры широкого круга материалов [1,2].…”
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