In situ manipulation and switching of dislocations in bilayer graphene

Schweizer, Peter; Dölle, Christian; Spiecker, Erdmann

doi:10.1126/sciadv.aat4712

Cited by 41 publications

(24 citation statements)

References 33 publications

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“…2 the true DF STEM technique combined with LEND in SEM reveals the same Burgers vectors as DF TEM and is therefore well suited for reliable Burgers vector analysis of dislocations in 2D-materials. A closer analysis shows that even the sign of the Burgers vector can be determined by analyzing DF images taken under sample tilt, as we demonstrated for the TEM analysis in [4].…”

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confidence: 58%

Diffraction contrast analysis of dislocations in 2D materials using true dark-field and 4D-STEM in SEM

et al. 2021

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Diffraction techniques are ubiquitous in electron microscopy, especially in Transmission Electron Microscopy (TEM). TEM enables the use of an objective aperture placed in the diffraction plane to increase contrast in bright-field or dark-field mode. On the other hand, Scanning Electron Microscopy (SEM) also offers several diffraction techniques, such as EBSD and TKD. However, the exploration of on-axis transmission diffraction is still in its infancy. In recent years there have been several developments in this direction [1-3] to take advantage of the unique features of SEM, such as low acceleration voltages, large chamber size, and strong topographic contrast. However, further developments to also include an aperture system for dedicated diffraction contrast imaging have not been realized so far.

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confidence: 58%

Diffraction contrast analysis of dislocations in 2D materials using true dark-field and 4D-STEM in SEM

et al. 2021

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“…5 for a comparison of the dissolution rates with and without cleaning) and the ability to use low energies. Low energy imaging enabled by in situ cleaning has already been exploited in prior work for the direct manipulation of defects in bilayer graphene 28,29 . While graphene serves as the benchmark to showcase the method, it can be readily applied to other 2D materials like MoS 2 (see Supplementary Fig.…”

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Mechanical cleaning of graphene using in situ electron microscopy

Schweizer¹,

Dölle²,

Dasler

et al. 2020

Nat Commun

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Avoiding and removing surface contamination is a crucial task when handling specimens in any scientific experiment. This is especially true for two-dimensional materials such as graphene, which are extraordinarily affected by contamination due to their large surface area. While many efforts have been made to reduce and remove contamination from such surfaces, the issue is far from resolved. Here we report on an in situ mechanical cleaning method that enables the site-specific removal of contamination from both sides of two dimensional membranes down to atomic-scale cleanliness. Further, mechanisms of re-contamination are discussed, finding surface-diffusion to be the major factor for contamination in electron microscopy. Finally the targeted, electron-beam assisted synthesis of a nanocrystalline graphene layer by supplying a precursor molecule to cleaned areas is demonstrated.

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“…Their dynamics directly affect grain growth stagnation [4], grain boundary mobility [5], superplasticity [6], and shear strength [7,8], altering the microstructure evolution of a wide class of materials [3], including high-T c superconductors [9] and two-dimensional (2d) materials [10][11][12]. A complete understanding of grain boundary dynamics is crucial for informing materials synthesis methods and industrial processes [3,[13][14][15].…”

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Statistical Mechanics of Low Angle Grain Boundaries in Two Dimensions

Zhang,

Nelson

2020

Preprint

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We explore order in low angle grain boundaries (LAGBs) embedded in a two-dimensional crystal at thermal equilibrium. Symmetric LAGBs subject to a Peierls potential undergo, with increasing temperatures, a thermal depinning transition, above which the LAGB exhibits transverse fluctuations that grow logarithmically with inter-dislocation distance. Longitudinal fluctuations lead to a series of melting transitions marked by the sequential disappearance of diverging algebraic Bragg peaks with universal critical exponents. Aspects of our theory are checked by a mapping onto random matrix theory.

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In situ manipulation and switching of dislocations in bilayer graphene

Abstract: A materials scientist’s dream come true: manipulating and controlling individual dislocations in situ.

Cited by 41 publications

References 33 publications

Diffraction contrast analysis of dislocations in 2D materials using true dark-field and 4D-STEM in SEM

Diffraction contrast analysis of dislocations in 2D materials using true dark-field and 4D-STEM in SEM

Mechanical cleaning of graphene using in situ electron microscopy

Statistical Mechanics of Low Angle Grain Boundaries in Two Dimensions

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