In situ mass spectral and IR studies of the role of auxiliary reagents in the enhancement of copper growth in the chemical vapor deposition of Cu(II) β-diketonate precursors

Kaloyeros, Alain E.; Bo, Zheng; Lou, Ishing; Lau, J.; Hellgeth, John W.

doi:10.1016/0040-6090(94)05804-0

Cited by 23 publications

(19 citation statements)

References 8 publications

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“…Cl 2 discharge28; Decomposition chemistry and rotational temperature in a N 2 O r.f. discharge29, 30; Plasma deposition of amorphous hydrogenated silicon31; Chemical vapor deposition (CVD) of SiC32; and Plasma‐assisted chemical vapor deposition (PACVD) of copper 33 Other gas‐phase diagnostics employed for in situ plasma studies include mass spectrometry, optical emission spectroscopy, optical absorption spectroscopy, IR laser diode spectroscopy, microwave absorption spectroscopy, laser‐induced fluorescence spectroscopy, and Raman spectroscopy 34…”

Section: Methodsmentioning

confidence: 99%

Plasma dissociation reaction kinetics. I. Methyl methacrylate

Pan

Denton

1999

J. Appl. Polym. Sci.

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Fourier transform infrared spectroscopy (FTIR) was utilized to study the plasma gas-phase reaction kinetics and reaction mechanisms in capacitively coupled glow discharges of methyl methacrylate (MMA) under zero monomer flow rate conditions. The gas-phase study shows two major electron-impact-induced dissociation pathways in MMA plasmas: the C-O bond cleavage reaction and decarboxylations. The C-O bond cleavage reaction accounts for approximately one-half of the MMA dissociation, and neutral formaldehyde and dimethyl ketene (DMK) are produced via intramolecular rearrangement. Decarboxylations produce CO, CO 2 , and a number of radicals that subsequently stabilize to form neutrals, including propylene, allene, and methanol. These intermediate species then further dissociate in the plasma to small hydrocarbons (methane, acetylene, and ethylene), CO, CO 2 , and H 2 . Plasma power and initial monomer pressure have only minor effects on the MMA fragmentation chemistry. However, the reaction rate increases at higher-power and lower initial monomer pressure conditions. The modeling also reveals the relative reactivities of the neutrals. A time-scale transformation technique based on the MMA decomposition half-life significantly reduces the effects of the reactor condition on the kinetics. In addition, mass balance ratios are utilized to calculate the portion of plasma species that have been accounted for by the in situ technique.

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Section: Methodsmentioning

confidence: 99%

Plasma dissociation reaction kinetics. I. Methyl methacrylate

Pan

Denton

1999

J. Appl. Polym. Sci.

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“…Hydrogen gradually decomposes the metallic precursor into smaller fragments which are CH 3 + , CH 3 CO + , and COCH 2 COCH + ions [21][22][23][24] . To provide a general picture of copper deposition in the pore of SBA-15 coated with carbon, deposition mechanism of copper is suggested, as displayed in Fig.…”

Section: Characterizationmentioning

confidence: 99%

Fabrication of copper nanorods by low-temperature metal organic chemical vapor deposition

Zhang

Lam

et al. 2006

CHINESE SCI BULL

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Copper nanorods have been synthesized in mesoporous SBA-15 by a low-temperature metal organic chemical vapor deposition (MOCVD) employing copper (II) acetylacetonate, Cu(acac) 2 , and hydrogen as a precursor and reactant gas, respectively. The hydrogen plays an important role in chemical reduction of oganometallic precursor which enhances mass transfer in the interior of the SBA-15 porous substrate. Such copper nanostructures are of great potentials in the semiconductor due to their unusual optical, magnetic and electronic properties. In addition, it has been found that chemically modifying the substrate surface by carbon deposition is crucial to such synthesis of copper nanostructures in the interior of the SBA-15, which is able to change the surface properties of SBA-15 from hydrophilic to hydrophobic to promote the adsorption of organic cupric precursor. It has also been found that the copper nanoparticles deposited on the external surface are almost eliminated and the copper nanorods are more distinct while the product was treated with ammonia. This approach could be achieved under a mild condition: a low temperature (400℃) and vacuum (2 kPa) which is extremely milder than the conventional method. It actually sounds as a foundation which is the first time to synthesize a copper nanorod at a mild condition of a low reaction temperature and pressure.

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“…In principle, the effect of H 2 O on the decomposition of these precursors may be significant since it could act as a protonolytic reagent to form volatile Hhfa by-products. [77][78][79] To explore this possibility, the above experiment was conducted without water in the oxidizing stream. The same general results were observed with mass transport-limited deposition of Ba and Ca beginning near 400 ± C [ Fig.…”

Section: B Mocvd Film Growth and Deposition Mechanismmentioning

confidence: 99%

“…12(a)] could conceivably facilitate precursor decomposition by acting as a proton source to form volatile Hhfa by-products. [77][78][79] However, only a slight influence of H 2 O on the onset temperature for masstransport limited BaCaCuO(F) film growth is observed [ Fig. 12(b)] and is surprising in view of the pronounced effect H 2 O has in accelerating the decomposition of Cu(hfa) 2 during Cu ± thin film growth.…”

Section: B Mocvd Film Growth and Deposition Mechanismmentioning

confidence: 99%

Thin films for superconducting electronics: Precursor performance issues, deposition mechanisms, and superconducting phase formation-processing strategies in the growth of Tl₂Ba₂CaCu₂O₈films by metal-organic chemical vapor deposition

et al. 1997

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Epitaxial Tl2Ba2CaCu2O8 thin films with excellent electrical transport characteristics are grown in a two-step process involving metal-organic chemical vapor deposition (MOCVD) of a BaCaCuO(F) thin film followed by a postanneal in the presence of Tl2O vapor. Vapor pressure characteristics of the recently developed liquid metal-organic precursors Ba(hfa)2 • mep (hfa = hexafluoroacetylacetonate, mep = methylethylpentaglyme), Ca(hfa)2 • tet (tet = tetraglyme), and the solid precursor Cu(dpm)2 (dpm = dipivaloylmethanate) are characterized by low pressure thermogravimetric analysis. Under typical film growth conditions, transport is shown to be diffusion limited. The transport rate of Ba(hfa)2 • mep is demonstrated to be stable for over 85 h at typical MOCVD temperatures (120 °C). In contrast, the vapor pressure stability of the commonly used Ba precursor, Ba(dpm)2, deteriorates rapidly at typical growth temperatures, and the decrease in vapor pressure is approximately exponential with a half-life of ∼9.4 h. These precursors are employed in a low pressure (5 Torr) horizontal, hot-wall, film growth reactor for growth of BaCaCuO(F) thin films on (110) LaAlO3 substrates. From the dependence of film deposition rate on substrate temperature and precursor partial pressure, the kinetics of deposition are shown to be mass-transport limited over the temperature range 350–650 °C at a 20 nm/min deposition rate. A ligand exchange process which yields volatile Cu(hfa)2 and Cu(hfa) (dpm) is also observed under film growth conditions. The MOCVD-derived BaCaCuO(F) films are postannealed in the presence of bulk Tl2Ba2CaCu2O8 at temperatures of 720–890 °C in flowing atmospheres ranging from 0–100% O2. The resulting Tl2Ba2CaCu2O8 films are shown to be epitaxial by x-ray diffraction and transmission electron microscopic (TEM) analysis with the c-axis normal to the substrate surface, with in-plane alignment, and with abrupt film-substrate interfaces. The best films exhibit a Tc = 105 K, transport-measured Jc= 1.2 × 105 A/cm2 at 77 K, and surface resistances as low as 0.4 mΩ (40 K, 10 GHz).

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In situ mass spectral and IR studies of the role of auxiliary reagents in the enhancement of copper growth in the chemical vapor deposition of Cu(II) β-diketonate precursors

Cited by 23 publications

References 8 publications

Plasma dissociation reaction kinetics. I. Methyl methacrylate

Plasma dissociation reaction kinetics. I. Methyl methacrylate

Fabrication of copper nanorods by low-temperature metal organic chemical vapor deposition

Thin films for superconducting electronics: Precursor performance issues, deposition mechanisms, and superconducting phase formation-processing strategies in the growth of Tl₂Ba₂CaCu₂O₈films by metal-organic chemical vapor deposition

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In situ mass spectral and IR studies of the role of auxiliary reagents in the enhancement of copper growth in the chemical vapor deposition of Cu(II) β-diketonate precursors

Cited by 23 publications

References 8 publications

Plasma dissociation reaction kinetics. I. Methyl methacrylate

Plasma dissociation reaction kinetics. I. Methyl methacrylate

Fabrication of copper nanorods by low-temperature metal organic chemical vapor deposition

Thin films for superconducting electronics: Precursor performance issues, deposition mechanisms, and superconducting phase formation-processing strategies in the growth of Tl2Ba2CaCu2O8films by metal-organic chemical vapor deposition

Contact Info

Product

Resources

About

Thin films for superconducting electronics: Precursor performance issues, deposition mechanisms, and superconducting phase formation-processing strategies in the growth of Tl₂Ba₂CaCu₂O₈films by metal-organic chemical vapor deposition