In Situ Measurement and Stress Evaluation for Wire Bonding Using Embedded Piezoresistive Stress Sensors

Yong, Woon Yik; Zhang, Xiaowu; Chai, Tai Chong; Trigg, A. D.; Jaafar, Norhanani Binte; Lo, Guo‐Qiang

doi:10.1109/tcpmt.2012.2217141

Cited by 21 publications

(7 citation statements)

References 6 publications

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“…The methodology can be further explored for application in the process development of wire bond interconnection, where the measured damage energy of the bond pad structure can be expressed as a mechanical threshold or criterion, i.e., 'strength', and compared with the actual wire bonding 'stress' that could be characterized by the piezoresistive sensors embedded underneath the bond pad [17].…”

Section: Discussionmentioning

confidence: 99%

Compliance Compensation Analysis of Micromechanical Testers Integrated With Acoustic Emission Sensors

Yeo

Yong

Zhou

2014

IEEE Trans. Device Mater. Relib.

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A damage test method is developed to characterize the damage behavior of the bond pad stack structure of an integrated circuit chip. The test method uses a micromechanical test machine (MTM) for an indentation test and an acoustic emission sensor for the bond pad stack crack or damage detection. This would bring about the need for considering the effects of the sensor and others on the total compliance. Previous works have not considered or were unable to consider these effects, and a linear elastic behavior is usually assumed for the load frame compliance compensation. As a result, this may provide a significant error in calculating the indentation displacement and damage energy. In this paper, a detailed compliance test, analysis, and compensation technique of a damage test system are presented, where the nonlinear elastic behavior effect is considered. It is found that the compliance test is independent of the loading rate but dependent on the maximum load applied, where a nonlinear elastic behavior of the system compliance is observed at a higher indentation load. In order to avoid erroneous calculation in the indentation displacement and damage energy of the evaluated specimen in the damage test, a nonlinear elastic behavior of the system compliance has to be considered. This could be essential for any MTM integrated with external sensing elements and fixtures.

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Section: Discussionmentioning

confidence: 99%

Compliance Compensation Analysis of Micromechanical Testers Integrated With Acoustic Emission Sensors

Yeo

Yong

Zhou

2014

IEEE Trans. Device Mater. Relib.

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“…However, Cu free air ball (FAB) is much harder than Au FAB ball so that there are several challenges for applying Cu wire bond such as excessive deformation of the Al bond pad and dielectric layer crack under the bond pads caused by high amount of stress induced by contact force and ultrasonic energy [1][2][3]. Stress induced by bond force and ultrasonic dissipation during wire bonding can be measured in-situ using stress sensor and the influence of bonding parameters (bond force, bond power and temperature) can be studied through stress sensor designed in chip [4][5][6]. However, failure criterion and failure mode are still unknown even wire bond induced stress can be monitored.…”

Section: Introductionmentioning

confidence: 99%

Study on failure mode and mechanism of bond pad under Cu ball bonding process using wire pull test and finite element modeling

Wai

Hsiao

et al. 2015

2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)

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In this work, wire pull test combined with finite element analysis (FEA) were conducted to investigate failure mode and failure criterion for bond pad reliability assessment under Cu wire bond process. Pull test was conducted for bonded Cu wires with different pull locations changing from the first ball bond to the second wedge bond. Failure forces were recorded and failure site and modes were studied. The effect of pull location on failure mode was observed. Failure modes change from wire neck broken, ball lift, pad peel to wedge broken when pull location is changing from the first bond towards the second bond. Based on wire pull test and FEA simulation results, failure mechanism and failure criterion were developed for different Cu wire bond failure modes. The effects of wire loop height on pull test results and modeling stress were also investigated.

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“…T HERMOSONIC wire bonding is one of the critical processes in light-emitting diode (LED) package assembly, where microdimension wires are mechanically bonded to the LED chip bond pad for electrical connections [1], [2]. During thermosonic wire bonding, a gold wire is guided through a hole in the capillary of the wire bonder, and an electrical flame-off is used to melt the tail of the gold wire into a spherical ball (free air ball) by high-voltage electrical discharging [3].…”

Section: Introductionmentioning

confidence: 99%

Comparison of Radio Frequency and Microwave Plasma Treatments on LED Chip Bond Pad for Wire Bond Application

Devarajan

Lee²,

Lacey³

2015

IEEE Trans. Compon., Packag. Manufact. Technol.

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The efficiencies of argon radio frequency [Ar(RF)] and argon microwave [Ar(MW)] plasma treatments were compared in terms of contaminant removal and wire bond interfacial adhesion quality in this paper. The efficiency in contaminant removal was analyzed by applying Ar(RF) and Ar(MW) plasma treatments with operating frequencies of 13.56 MHz and 2.45 GHz, respectively, onto the light-emitting diode chip bond pad prior to the wire bonding process. Surface characterization results show that Ar(MW) plasma treatment is able to remove the bond pad surface contaminant and improve the bond pad surface roughness more effectively than Ar(RF) plasma treatment. Moreover, contact angle measurement results show that bond pad samples after Ar(MW) plasma treatment have higher surface free energy compared with Ar(RF) plasma treatment. To study the improvement of wire bond interfacial adhesion after Ar(RF) and Ar(MW) plasma treatments, the bond pad samples were wire-bonded via the thermosonic wire bonding method and examined with the ball shear test. The ball shear test results show that Ar(MW) plasma treatment leads to a better improvement of wire bond interfacial adhesion compared with Ar(RF) plasma treatment.Index Terms-Light-emitting diode (LED), plasma treatment, radio frequency (RF) and microwave (MW), surface cleaning, wire bond.

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In Situ Measurement and Stress Evaluation for Wire Bonding Using Embedded Piezoresistive Stress Sensors

Cited by 21 publications

References 6 publications

Compliance Compensation Analysis of Micromechanical Testers Integrated With Acoustic Emission Sensors

Compliance Compensation Analysis of Micromechanical Testers Integrated With Acoustic Emission Sensors

Study on failure mode and mechanism of bond pad under Cu ball bonding process using wire pull test and finite element modeling

Comparison of Radio Frequency and Microwave Plasma Treatments on LED Chip Bond Pad for Wire Bond Application

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