In-situ measurement of dielectric thickness during etching or developing processes

Konnerth, K.; Dill, F.H.

doi:10.1109/t-ed.1975.18160

Cited by 70 publications

(34 citation statements)

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“…At a time when lithography was considered a true art, such an approach was met with much skepticism. The results oftheir pioneering work were published in a landmark series of papers in 1975 [1][2][3][4], now referred to as the "Dill papers." These papers not only gave birth to the field of lithography modeling, they represented the first serious attempt to describe lithography not as an art, but as a science.…”

Section: Optical Lithography Simulationmentioning

confidence: 99%

<title>Lithographic simulation: a review</title>

Mack

2001

SPIE Proceedings

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A review of the current state of the art in optical and electron beam lithography simulation is presented. Basic physical models are described and examples are given. In addition, rigorous electromagnetic simulation for mask topography is shown and the use of statistical modeling to predict feature size distributions in manufacturing is described. Finally, numerous examples of the use of lithography simulation and its impact on the semiconductor industry are offered.

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Section: Optical Lithography Simulationmentioning

confidence: 99%

<title>Lithographic simulation: a review</title>

Mack

2001

SPIE Proceedings

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“…All current lithography modeling is based on the pioneering work of Dill et al [1][2][3][4] Although more complex model details have been introduced to describe modern processing practices, commercial simulation packages still utilize the techniques and principles laid down by Dill and his coworkers in 1975.…”

Section: Introductionmentioning

confidence: 99%

Improved notch model for resist dissolution in lithography simulation

Robertson¹,

Pavelchek²,

Hoppe

et al. 2001

SPIE Proceedings

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The use of experimental development rate information is used to demonstrate various deficiencies in the dissolution rate equations commonly employed in commercial lithography simulation programs. An improved version of the Notch dissolution rate equation, incorporating one new parameter, is proposed, which addresses the observed deficiencies. Simulation work comparing the new equation to the standard Notch model reveals significant differences in process window and exposure margin, yet negligible changes in feature profile and iso-dense bias at "best" focus and exposure.

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“…In the case of positive photoresists, a number of techniques have been used to characterize the kinetics of dissolution (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12). The earliest such experiments were performed by exposing the resist to a solvent for a fixed time and then measuring the thickness of the remaining film (1).…”

mentioning

confidence: 99%

“…Numerous techniques for in situ dissolution measurements of positive resists have been developed (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13). Oldham describes a method for measuring capacitance changes between the developer and substrate (2).…”

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confidence: 99%

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Langmuir—Blodgett Deposition To Evaluate Dissolution Behavior of Multicomponent Resists

Rao

Hinsberg

Frank

et al. 1993

ACS Symposium Series

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The development behavior of diazonaphthoquinone resists has been studied extensively. Our work focuses on the influence exerted by photoactive compound (PAC) on the dissolution of an unexposed resist. In particular, we have evaluated the effect of the sensitzer's spatial distribution in the film. Stratified resist films have been fabricated through the combined use of spin casting and Langmuir-Blodgett deposition. With these resist structures, not only can the effect of locally high PAC concentrations on dissolution be evaluated, but the mobility of the sensitizer in the matrix can also be studied. We have found that embedding as little as three monolayers (30 Å) of PAC between two thicker layers of polymer (1000 Å each) causes a significant induction period when the solvent front reaches the PAC layer. In addition, the dissolution rate of the pure spin cast polymer layer underlying the PAC is reduced significantly. Thermal treatment of these resist structures has demonstrated that the PAC appears to be more mobile in Langmuir-Blodgett polymer films than in spin cast polymer films.As integrated circuit features shrink below 0.5 /im, the need for optimization of all lithographic steps is crucial. In order to define such features with high precision, the processing behavior of the photoresist materials used for patterning must be well-characterized. Hence, we need a fundamental understanding of their development behavior. Although much of the current semiconductor industry uses diazonaphthoquinone-based positive resists, many details of the dissolution mechanism of these materials are still unknown.Thin film dissolution behavior has been the subject of study for many applications. In the case of positive photoresists, a number of techniques have been used to characterize the kinetics of dissolution (1-12). The earliest such experiments were performed by exposing the resist to a solvent for a fixed time and then measuring the thickness of the remaining film (1). From repeated measurements of this type, a bulk development rate could be determined.

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In-situ measurement of dielectric thickness during etching or developing processes

Cited by 70 publications

References 1 publication

<title>Lithographic simulation: a review</title>

<title>Lithographic simulation: a review</title>

Improved notch model for resist dissolution in lithography simulation

Langmuir—Blodgett Deposition To Evaluate Dissolution Behavior of Multicomponent Resists

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