In situ monitoring the growth of thin-film ZnS/Zn(S,O) bilayer on Cu-chalcopyrite for high performance thin film solar cells

Sáez-Araoz, Rodrigo; Abou‐Ras, Daniel; Niesen, T. P.; Neisser, A.; Wilchelmi, K.; Lux‐Steiner, Martha Ch.; Ennaoui, A.

doi:10.1016/j.tsf.2008.10.139

Cited by 24 publications

(16 citation statements)

References 13 publications

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“…In contrast to literature reports , we have not observed the formation of a pure ZnS layer on the substrate surface in the initial stages of deposition. Such a layer is not evident from SIMS and SNMS depth profiling .…”

Section: Resultscontrasting

confidence: 99%

“…In the interface experiments with stepwise deposition of Zn(O,S), the Auger parameter cannot be evaluated at very low coverage, as the Auger emission of Na, which is typically present at Cu(In,Ga)Se 2 surfaces , appears at the same energy. The increase of the S concentration at the beginning of the CBD Zn(O,S) growth might be connected to the different substrates (CuInS 2 has been used in literature studies ) or to the concentration of free sulfide ions in the used thiourea precursor solution. Since thiourea dissolved in water very slowly decomposes by hydrolysis, the concentration of released sulfide anions depends on the age of the thiourea solution.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Valence band offsets at Cu(In,Ga)Se₂/Zn(O,S) interfaces

Adler

Botros

Witte

et al. 2013

Phys. Status Solidi A

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The energy band alignment at interfaces between Cuchalcopyrites and Zn(O,S) buffer layers, which are important for thin-film solar cells, are considered. Valence band offsets derived from X-ray photoelectron spectroscopy for Cu(In,Ga) Se 2 absorber layers with CdS and Zn(O,S) compounds are compared to theoretical predictions. It is shown that the valence band offsets at Cu(In,Ga)Se 2 /Zn(O,S) interfaces approximately follow the theoretical prediction and vary significantly from sample to sample. The integral sulfide content of chemical bath deposited Zn(O,S) is reproducibly found to be 50-70%, fortuitously resulting in a conduction band offset suitable for solar cell applications with Cu(In,Ga)Se 2 absorber materials. The observed variation in offset can neither be explained by variation of the Cu content in the Cu(In,Ga)Se 2 near the interface nor by local variation of the chemical composition. Fermi level pinning induced by high defect concentrations is a possible origin of the variation of band offset.

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Section: Resultscontrasting

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Valence band offsets at Cu(In,Ga)Se₂/Zn(O,S) interfaces

Adler

Botros

Witte

et al. 2013

Phys. Status Solidi A

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“…(chemical bath deposition method, CBD) [1][2][3][4][5][6][7][8][9] CBD ZnS PH Brien et al [ 10] Zn(OH) 2 ZnS OH -Brien et al [11] ZnS pH CdS Antony et al [12] PH 10-10.6 Zn(NH 3 ) 4 2+ Zn(N 2 H 4 ) 2+ pH Ben Nasr et al [13] HCl pH ZnS PH pH pH pH PH pH…”

Section: Cigs Znsmentioning

confidence: 99%

Influence of different pH regulators and pH values on optical properties of ZnS nanocrystalline thin films

Huang

Liu

Duo

et al. 2011

2011 International Conference on Remote Sensing, Environment and Transportation Engineering

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ZnS thin films were prepared under different pH regulators and pH values by the chemical bath deposition method (CBD). Deposition mechanism was discussed and optical properties of ZnS thin films were measured by n k d-film analysis system. Results show the addition of pH regulators is beneficial to decrease the precipitation of the solution. The decrease of the precipitation of the solution could increase the deposition rate of the film. When there is addition of NH 3 and the controlled pH value is 10.9 in the solution, the deposition rate of the film is largest, which is agreement with the discussed condition that when there is no pH regulator and the pH value is dropped to 10.9 in the solution. Band edge of the transmission of all films shifts greatly to short wavelength and tends to be similar. Band gap values of all the films are larger than 4.00eV. Grain size of all the thin films is almost 5nm and the films have the pronounced quantum size effect. It shows that it is easy for ZnS to form a lot of nucleation points on the substrate, but difficult to grow up because of the existence of intermolecular hydrogen bond effect in the solution.

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“…[2][3][4][5]13 Recently, a small number of studies have appeared in which real time investigations have been used, all with the goal of better understanding the nucleation and growth process of CBD film deposition. These include techniques based on quartz crystal microbalance measurement, 4 turbidity measurements, 14 and optical reflectance measurement, 15 The existing in-situ studies 4,14,15 revealed three regimes of film growth -first, nucleation on the substrate surface, second, a linear growth rate resulting in a compact layer, and third, a cluster mechanism that created a porous layer. However, these studies were performed under dip coating conditions where there is a higher possibility that the CdS particles precipitate in the solution and then stick to the substrate, hence contributing to the final microstructure.…”

Section: Introductionmentioning

confidence: 99%

In Situ Localized Surface Plasmon Resonance (LSPR) Spectroscopy to Investigate Kinetics of Chemical Bath Deposition of CdS Thin Films

et al. 2015

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Techniques that can characterize the early stages of thin film deposition from liquid phase processes can aid greatly in our understanding of mechanistic aspects of chemical bath deposition (CBD).Here we have used localized surface plasmon resonance (LSPR) spectroscopy to monitor in-situ the kinetics of early-stage growth of cadmium sulfide (CdS) thin films on Ag nanoparticle on quartz substrates. Real-time shift during CdS deposition showed that the LSPR wavelength red shifted rapidly due to random deposition of CdS on the substrate, but saturated at longer times. modeling showed that these features could be interpreted as an initial deposition of CdS islands followed by preferential deposition onto itself. The CdS also showed significantly enhanced Raman signals up to 170 times due to surface enhanced raman scattering (SERS) from the CdS/Ag NP regions. The ex-situ SERS effect supported the LSPR shift suggesting that these techniques could be used to understand nucleation and growth phenomena from the liquid phase.

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In situ monitoring the growth of thin-film ZnS/Zn(S,O) bilayer on Cu-chalcopyrite for high performance thin film solar cells

Cited by 24 publications

References 13 publications

Valence band offsets at Cu(In,Ga)Se₂/Zn(O,S) interfaces

Valence band offsets at Cu(In,Ga)Se₂/Zn(O,S) interfaces

Influence of different pH regulators and pH values on optical properties of ZnS nanocrystalline thin films

In Situ Localized Surface Plasmon Resonance (LSPR) Spectroscopy to Investigate Kinetics of Chemical Bath Deposition of CdS Thin Films

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In situ monitoring the growth of thin-film ZnS/Zn(S,O) bilayer on Cu-chalcopyrite for high performance thin film solar cells

Cited by 24 publications

References 13 publications

Valence band offsets at Cu(In,Ga)Se2/Zn(O,S) interfaces

Valence band offsets at Cu(In,Ga)Se2/Zn(O,S) interfaces

Influence of different pH regulators and pH values on optical properties of ZnS nanocrystalline thin films

In Situ Localized Surface Plasmon Resonance (LSPR) Spectroscopy to Investigate Kinetics of Chemical Bath Deposition of CdS Thin Films

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Valence band offsets at Cu(In,Ga)Se₂/Zn(O,S) interfaces

Valence band offsets at Cu(In,Ga)Se₂/Zn(O,S) interfaces