Interface formation between 25-lm AlSi1 wire and flash-Au substrate metallization during a bonding time of 50 ms has been investigated. Only a few milliseconds after the ultrasonic power is switched on, intermetallic phase growth starts, continuing until the end of the wire-bonding process. During the entire bonding time, the fraction of the interface covered with Au 8 Al 3 increases, and at the end of the bonding time, the interface is nearly completely covered with that phase. Finite-element modeling (FEM) of the temperature in the interface region indicates maximum temperatures well below 100°C, thus making solely thermally activated intermetallic phase growth impossible. However, it is demonstrated that the phase growth observed during the ultrasonic wire-bonding process could result from an accelerated diffusion process caused by a higher vacancy concentration. The accelerated diffusion process would have an activation energy Q of 0.36 eV.