In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts

Formation of parallel (111) twin boundaries in silicon growth from the melt explained by molecular dynamics simulations

“…It does not address the nucleation of twin boundaries. Twin formation in silicon growth from the melt has been extensively studied experimentally and several formation models have been proposed [2][3][4][5][6]. Still, the nucleation process of the twin boundaries has not been directly observed.…”

Growth of Si Bulk Crystals with Large Diameter Ratio Using Small Crucibles by Creating a Large Low-Temperature Region Inside a Si Melt Contained in an NOC Furnace Developed Using Two Zone Heaters

“…When DT d is sufficiently large to obtain a large DT 2 , we can use the large DT 2 or DT before DT 2 reaches the supercooling limit of 10 K below Mp. 22 Thus, DT is effective as a criterion for controlling the size and shape of ingots using this method when the temperature gradient in the Si melt is kept almost constant during cooling or the same DT d is used and the amount of melt convection is small. A large lowtemperature region can be created with a large DT, and DT increases as the temperature gradient decreases in the large area of the Si melt together with a large DT d near the crucible wall.…”

Phase-field modeling of twin-related faceted dendrite growth of silicon

“…To mimic the experimental observations [17,18,20], the simulation results are viewed from the 〈111〉 direction. Fig.…”