In situ observations of the dissolution of an AlN film into liquid Al using a high-temperature microscope

Adachi, Masayoshi; Fujiwara, Kimiko; Sekiya, Ryuta; Kobatake, Hidekazu; Ohtsuka, Makoto; Fukuyama, Hidetoshi

doi:10.1016/j.mssp.2022.106469

Cited by 2 publications

(1 citation statement)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Wide-bandgap materials of the III-N family are fundamental in the design and development of high-quality deep UV (DUV) devices. Aluminum-gallium nitride (AlGaN) has been extensively analyzed by epitaxial growth techniques such as metal−oxide chemical vapour deposition (MOCVD) [4] , molecular beam epitaxy (MBE) [5,6] , and liquid phase epitaxy (LPE) [7] . This high-quality growth has allowed us to understand the feasibility of Ⅲ-N properties, such as superior transport properties [8,9] and wide bandgap tunability [10,11] .…”

Section: Introductionmentioning

confidence: 99%

Metal-modulated epitaxy of Mg-doped Al_0.80In_0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

Solís-Cisneros,

Hernández-Gutiérrez,

Campos-González

et al. 2024

J. Semicond.

View full text Add to dashboard Cite

This work reports the growth and characterization of p-AlInN layers doped with Mg by plasma-assisted molecular beam epitaxy (PAMBE). AlInN was grown with an Al molar fraction of 0.80 by metal-modulated epitaxy (MME) with a thickness of 180 nm on Si(111) substrates using AlN as buffer layers. Low substrate temperatures were used to enhance the incorporation of indium atoms into the alloy without clustering, as confirmed by X-ray diffraction (XRD). Cathodoluminescence measurements revealed ultraviolet (UV) range emissions. Meanwhile, Hall effect measurements indicated a maximum hole mobility of 146 cm2/(V∙s), corresponding to a free hole concentration of 1.23 × 1019 cm−3. The samples were analyzed by X-ray photoelectron spectroscopy (XPS) estimating the alloy composition and extracting the Fermi level by valence band analysis. Mg-doped AlInN layers were studied for use as the electron-blocking layer (EBL) in LED structures. We varied the Al composition in the EBL from 0.84 to 0.96 molar fraction to assess its theoretical effects on electroluminescence, carrier concentration, and electric field, using SILVACO Atlas. The results from this study highlight the importance and capability of producing high-quality Mg-doped p-AlInN layers through PAMBE. Our simulations suggest that an Al content of 0.86 is optimal for achieving desired outcomes in electroluminescence, carrier concentration, and electric field.

show abstract

Section: Introductionmentioning

confidence: 99%

Metal-modulated epitaxy of Mg-doped Al_0.80In_0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

Solís-Cisneros,

Hernández-Gutiérrez,

Campos-González

et al. 2024

J. Semicond.

View full text Add to dashboard Cite

show abstract

Temperature dependence of crystal growth behavior of AlN on Ni–Al using electromagnetic levitation and computer vision technique

Adachi

Hamaya

Morikawa

et al. 2023

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

In situ observations of the dissolution of an AlN film into liquid Al using a high-temperature microscope

Cited by 2 publications

References 25 publications

Metal-modulated epitaxy of Mg-doped Al_0.80In_0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

Metal-modulated epitaxy of Mg-doped Al_0.80In_0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

Temperature dependence of crystal growth behavior of AlN on Ni–Al using electromagnetic levitation and computer vision technique

Contact Info

Product

Resources

About

In situ observations of the dissolution of an AlN film into liquid Al using a high-temperature microscope

Cited by 2 publications

References 25 publications

Metal-modulated epitaxy of Mg-doped Al0.80In0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

Metal-modulated epitaxy of Mg-doped Al0.80In0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

Temperature dependence of crystal growth behavior of AlN on Ni–Al using electromagnetic levitation and computer vision technique

Contact Info

Product

Resources

About

Metal-modulated epitaxy of Mg-doped Al_0.80In_0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

Metal-modulated epitaxy of Mg-doped Al_0.80In_0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes