In situ optical monitoring of AlAs wet oxidation using a novel low-temperature low-pressure steam furnace design

Feld, S.A.; Loehr, John P.; Sherriff, R. E.; Wiemeri, Jeffrey C.; Kaspi, R.

doi:10.1109/68.655356

Cited by 21 publications

(15 citation statements)

References 18 publications

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“…Yet another study of AlAs has shown linear dependence at T 5 350 "C and parabolic behavior at T 2 375 "C [19]. The apparent shift between reaction-rate-limited and diffusion-limited regimes can be explained by the relative importance of the As203 intermediate in the process, as illustrated in Fig.…”

mentioning

confidence: 89%

Wet Oxidation of High-Al-Content III–V Semiconductors: Important Materials Considerations for Device Applications

Ashby

1999

MRS Proc.

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Wet oxidation of high-Al-content AlGaAs semiconductor layers in vertical cavity surface emitting lasers (VCSELs) has produced devices with record low threshold currents and voltages and with wall-plug efficiencies greater than 50%. Wet oxidation of buried AlGaAs layers has been employed to reduce the problems associated with substrate current leakage in GaAs-oninsulator (GOI) MESFETs. Wet oxidation has also been considered as a route to the long-sought goal of a III-V MIS technology. To continue improving device designs for even higher performance and to establish a truly manufacturable technology based on wet oxidation, the effect of oxidation of a given layer on the properties of the entire device structure must be understood. The oxidation of a given layer can strongly affect the electrical and chemical properties of adjacent layers. Many of these effects are derived from the production of large amounts of elemental As during the oxidation reaction, the resultant generation of point defects, and the diffusion of these defects into adjacent regions. This can modify the chemical and electrical properties of these regions in ways that can impact device design, fabrication, and performance. Current understanding of the problem is discussed here

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confidence: 89%

Wet Oxidation of High-Al-Content III–V Semiconductors: Important Materials Considerations for Device Applications

Ashby

1999

MRS Proc.

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“…Consider the case where the STREMER operates at injection current levels up to 1 A, and using no heat sinking, so the design wavelength is calculated using 3.1: λ 0 = 0.1169(1000 A) + 977. 6 (3.7)…”

Section: Bipolar Cascade Light Emitting Diode Designmentioning

confidence: 99%

Why Choose Peace? The El Salvador Experience

Herrera¹

2008

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“…Equation 1 was extensively applied to many systems of III-IV semiconductors. [2][3][4][5][6][7][8][9][10][11] In particular, Choquette et al 2 and Naone and Coldren 10 have found that in the GaAs/AlAs/GaAs system the oxidation rate in the AlAs layer increases with its thickness. In order to explain the thickness dependence in the wet oxidation of AlAs, Naone and Coldren 10 proposed an interfacial energy model by considering the force balance at the junction of the oxide, AlAs and GaAs, and derived a simple relation between the contact angle, or curvature, and the thickness of the AlAs layer.…”

Section: Introductionmentioning

confidence: 96%

Wet Oxidation in a Square Sandwich Composite of GaAs/AlAs/GaAs

Lee

Chou

2007

Journal of Elec Materi

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Wet oxidation in a square sandwich composite, GaAs/AlAs/GaAs, with varying thickness of the AlAs layer was investigated in a temperature range of 400°C-480°C. At a given temperature and time, the oxidation depth increases with increasing thickness of the AlAs layer. A model based on the boundary layer diffusion in a sandwich composite is used to interpret the thickness effect, and the theoretical predictions are in good agreement with the measured oxidation data. The theory also predicts a value of 0.53 eV ± 0.03 eV to be the difference in activation energies of water vapor diffusion in the central layer AlAs and the outer layers GaAs in the temperature range studied. Such a difference remains to be verified experimentally.

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In situ optical monitoring of AlAs wet oxidation using a novel low-temperature low-pressure steam furnace design

Cited by 21 publications

References 18 publications

Wet Oxidation of High-Al-Content III–V Semiconductors: Important Materials Considerations for Device Applications

Wet Oxidation of High-Al-Content III–V Semiconductors: Important Materials Considerations for Device Applications

Why Choose Peace? The El Salvador Experience

Wet Oxidation in a Square Sandwich Composite of GaAs/AlAs/GaAs

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