In-situ quantification of deposition amount in a poly-Si etch chamber using optical emission spectroscopy of etching plasmas

Abstract

Absrract -Aiming at quanti$cation ofdeposirion amount in a ploy-Si etch chamber in-situ, we performed optical emission spectroscopy of a gate ploy-Si etching plasma. We obtained relative quantity of deposition in the etch chamber from the ratio ofoptical emission intensity ofSiBr io He in the plasma. Based on rhe results of relative quantity of deposition depending on cumulative etched wafers in the chamber: we estimated a mechanism of particle occurrence from the deposition in the chamber