In situ Raman characterization of CeO2 thin films sputtered on (111) Si in order to optimize the post growth annealing parameters

Promotion effect of ultraviolet light on NO + CO reaction over Pt/TiO2 and Pt/CeO2–TiO2 catalysts

“…This may be attributed to the increase at the oxygen vacancies of TiO 2 induced by the doping of CeO 2 . However, no peak at 462 cm −1 assigned to CeO 2[26] is observed.…”

“…This study implies that the photo-generated electrons induced by the band-gap excitation of TiO 2 can act as electron donor (instead of the traditional electron additives) to promote the thermal catalytic reduction of NO by CO to N 2 over the TiO 2 supported Pt catalyst. In other words, the photo-excitation of supports can strengthen the strong interaction between support and metal 26 nanoparticles, and then promote the thermo-catalytic reactivity of catalysts. This work maybe provides a new approach to eliminate automobile exhaust.…”

Reversible Oxygen Vacancy Generation on Pure CeO2 Nanorods Evaluated by in Situ Raman Spectroscopy

“…Because of changes in the crystal lattice, Raman spectroscopy may be employed to characterize the oxygen vacancies. Some properties of CeO 2 crystals, besides oxygen vacancies, affect their Raman spectrum profile, like its size and crystallinity . The Raman band near 460 cm –1 , attributed to a T 2g mode, is the only first-order Raman active mode of CeO 2 , which can be viewed as the breathing mode of the eight oxygen anions around each Ce IV ion in the fluorite structure. , An attempt to correlate oxygen vacancies and changes in CeO 2 Raman spectrum was made by McBride et al They observed a broadening and higher asymmetry of the T 2g band as well as the downshift of its frequency after doping CeO 2 -bulk with trivalent lanthanides.…”

Rapid thermal annealing of cerium dioxide thin films sputtered onto silicon (111) substrates: Influence of heating rate on microstructure and electrical properties

“…Most of the time, studies focused on the influence of thermal annealing highlight the impact of the annealing time and temperature on the crystalline quality [37,38] and electrical properties [39] of the CeO 2 layers. Besides, we have also shown in a previous paper, that the best crystalline quality of CeO 2 layers deposited on a (111) Si substrate was obtained for an RTA performed at 1000 1C under nitrogen atmosphere for 30 s [36].…”