2018
DOI: 10.1038/s41467-018-06945-0
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In situ strain tuning of the metal-insulator-transition of Ca2RuO4 in angle-resolved photoemission experiments

Abstract: Pressure plays a key role in the study of quantum materials. Its application in angle resolved photoemission (ARPES) studies, however, has so far been limited. Here, we report the evolution of the k-space electronic structure of bulk Ca2RuO4, lightly doped with Pr, under uniaxial strain. Using ultrathin plate-like crystals, we achieve uniaxial strain levels up to −4.1%, sufficient to suppress the insulating Mott phase and access the previously unexplored electronic structure of the metallic state at low temper… Show more

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Cited by 86 publications
(62 citation statements)
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“…The results for a wider energy interval, and full computational details can be found in Supplementary Material [22]. We note that these calculations are in good agreement with experimental ARPES data [26,27]. For comparison, we have also plotted DFT+U mean-field band dispersions.…”
mentioning
confidence: 73%
“…The results for a wider energy interval, and full computational details can be found in Supplementary Material [22]. We note that these calculations are in good agreement with experimental ARPES data [26,27]. For comparison, we have also plotted DFT+U mean-field band dispersions.…”
mentioning
confidence: 73%
“…Another important aspect to be discussed is the relevance of the OSMP to the Mott insulating state in Ca2RuO4. Previous theoretical (40,41) and experimental (42)(43)(44) results in CSRO reveal that the Mott transition in Ca2RuO4 (or < 0.2 of CSRO) is triggered by structural transition (L-Pbca to S-Pbca). The Mott state exists only in the S-Pbca phase, because the L-to S-Pbca transition leads to a full occupation of dxy, which in turn gives the essential condition for the formation the Mott state in the other two bands, i.e., half-filled αand β-bands.…”
Section: Discussionmentioning
confidence: 95%
“…Strain has been shown to induce band structure changes on the order of hundreds of meV in transition metal dichalcogenides [54][55][56][57], although this can requires large strain values that may be difficult to achieve intrinsically in a material without externally applied force. Furthermore, strain has recently been shown capable of driving an insulator-to-metal transition in a correlated electron system [58]. In the case of In/Si(111) it is well known that the displacement of particular atoms can have significant effects on the band structure [31,33,34] which could be partially induced by strain.…”
Section: Excited State Mappingmentioning
confidence: 99%