In-situ study of gold-induced surface structures and step rearrangements on the Si(001) surface by high-temperature STM

Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si(100)

“…In addition to the two step types, a Si(1 0 0) surface shows double-domain surfaces composed of the T A -Si terrace (a terrace where Si dimer rows run parallel to the step) and the T B -Si terrace (a terrace where Si dimer rows run perpendicular to the step). However, the doubledomain surface can be changed into a single-domain surface by increasing the miscut angle or step rearrangement by depositing specific atoms (e.g., Si, Ga, As, and Au) at high temperature [13][14][15][16][17] step (a bi-atomic step where Si dimer rows on the upper terrace run parallel to the step edge) or the D B step (a bi-atomic step where Si dimer rows on the upper terrace run perpendicular to the step edge) [12]. The formation of three-dimensional islands corresponding to QDs may be affected not only by the reconstructed surface induced by atom adsorption but also by the type of the atomic step on Si(1 0 0).…”

Au-induced perpendicular magnetization in Fe films grown on Si(001)

“…Shimakura et al [15], deduced from STM data that the c(18 × 2) phase occurs at ≈1000 K. A mixture of (5 × 3) and ( √ 26 × 3) ( √ 26 = 5.099) surface structures (3.84 Å unit mesh) built from both Si and Au atoms was shown by Lin et al [14] to form on the surface around 1100 K deposition temperature. Recently, the incommensurate (5 × 3.2) phase was also shown to occur under similar conditions on a vicinal Si(001) surface [16].…”

“…By Au-covered Si(001), we designate the Au-induced reconstructed Si(001) [13][14][15][16], subsequently covered with ≈1.5 ML of Au at ≈150 K. In this way, we expected that the native Si(001) reactivity may be reduced, by partly satisfying the surface dangling bonds. Concerning the thermal stability, we proved that a 2.3 ML thick Fe film preserves the perpendicular orientation of magnetization upon annealing close to room temperature (RT) [11].…”

Density functional theory study of Pt-induced Ge(001) reconstructions

“…This while the height of these back bonds for the Ge-Ge dimers is similar to the one found for the c͑4 ϫ 2͒-reconstruction. t 3 and t 4 , shown in Fig. 10, give the in-plane displacement along the surface dimer bond direction between sequential dimers in a single dimer row, i.e., the alignment of the surface atoms along the dimer rows.…”