In situ study on the thermal stability and interfaces properties of Er 2 O 3 /Al 2 O 3 /Si multi stacked films by X-ray photoelectron spectroscopy

Baolong, Gao; Mamat, Mamatrishat; Ghupur, Yasenjan; Ablat, Abduleziz; Ibrahim, Kurash; Wang, Jiaou; Liu, C.; Zhao, Jiali

doi:10.1016/j.spmi.2017.02.050

Cited by 4 publications

(2 citation statements)

References 19 publications

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“…Therefore, it can be concluded from the above studies that doping rare-earth elements and sintering at low oxygen partial pressure are effective in preparing ceramics with colossal permittivity, low dielectric loss, and high insulation resistance. Er 2 O 3 is a very attractive rare earth oxide, with high resistivity (10 12 –10 15 Ω cm), high dielectric constant (7–20), broad band gap ( E g = 4.0–6.0 eV), and strong chemical and thermal stability . In addition, on account of Er 3+ being a kind of amphoteric dopant, showing higher amphoteric behavior under low oxygen partial pressure, more kinds of defects can be produced in ceramics.…”

Section: Introductionmentioning

confidence: 99%

Simultaneously Achieving Colossal Permittivity, Ultralow Dielectric Loss Tangent, and High Insulation Resistivity in Er-Doped SrTiO₃ Ceramics via Oxygen Vacancy Regulation

Zhang

et al. 2022

ACS Appl. Mater. Interfaces

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High-performance Sr1–x Er x TiO3 (x = 0–0.014) ceramics were sintered in different atmospheres using the conventional solid-state reaction method. The phase structure and micromorphology of ceramics were analyzed using X-ray diffraction and scanning electron microscopy. Meanwhile, the Sr1–x Er x TiO3 (when x = 0.012) ceramic sintered in hydrogen attains a colossal permittivity (132 543 @1 kHz, 157 650 @1 MHz) and ultralow tan δ (0.009 @1 kHz, 0.03 @1 MHz) and has good frequency stability (20 Hz to 2 MHz) and temperature stability (−180 to 425 °C). X-ray photoelectron spectroscopy, electron paramagnetic resonance, and impedance analysis show that the colossal permittivity and ultralow dielectric loss are attributed to the defect dipoles and defect clusters [TiTi ′–VO ••–TiTi ′], [ErSr •–TiTi ′], [2ErTi ′–VO ••], and [ErSr •–ErTi ′]. The insulation resistivity is determined by the grain boundary. The dielectric properties of samples sintered in hydrogen are excellent, and then, the oxidation method is used to backfill the oxygen vacancy (VO ••), thus improving the insulation resistivity (2.8 × 1014 Ω cm) of the grain boundary. In addition, the diffusion mechanism of ceramic VO •• from low, medium, and high temperatures was studied by monitoring VO •• behavior in real time. The results reveal that the diffusion coefficient of VO •• in the grain boundary is greater than that in the grain; as a result, as the external oxygen partial pressure rises, the VO •• escapes first from the grain boundary. When the external oxygen partial pressure decreases, oxygen atoms enter the grain boundary region first and backfill oxygen vacancies.

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Section: Introductionmentioning

confidence: 99%

Simultaneously Achieving Colossal Permittivity, Ultralow Dielectric Loss Tangent, and High Insulation Resistivity in Er-Doped SrTiO₃ Ceramics via Oxygen Vacancy Regulation

Zhang

et al. 2022

ACS Appl. Mater. Interfaces

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“…This value is the characteristic signal for the Er 4 d 5/2 orbit, which is extremely close to that of Er 2 O 3 . [41][42][43] Therefore, this suggests that Er 3+ ions have entered into the Y 2 O 2 S matrix. Fig.…”

Section: Resultsmentioning

confidence: 99%

Application convenient and energy-saving mechano-optics of Er³⁺-doped X₂O₂S (X = Y/Lu/Gd) for thermometry

Han,

Li,

Cai

et al. 2023

J. Mater. Chem. C

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Reinforced near-infrared compatible absorption performance of Er4Al2O9 based on Sm3+/Dy3+ co-doping

Zhu

Guo

Song

et al. 2023

J Mater Sci: Mater Electron

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In situ study on the thermal stability and interfaces properties of Er 2 O 3 /Al 2 O 3 /Si multi stacked films by X-ray photoelectron spectroscopy

Cited by 4 publications

References 19 publications

Simultaneously Achieving Colossal Permittivity, Ultralow Dielectric Loss Tangent, and High Insulation Resistivity in Er-Doped SrTiO₃ Ceramics via Oxygen Vacancy Regulation

Simultaneously Achieving Colossal Permittivity, Ultralow Dielectric Loss Tangent, and High Insulation Resistivity in Er-Doped SrTiO₃ Ceramics via Oxygen Vacancy Regulation

Application convenient and energy-saving mechano-optics of Er³⁺-doped X₂O₂S (X = Y/Lu/Gd) for thermometry

Reinforced near-infrared compatible absorption performance of Er4Al2O9 based on Sm3+/Dy3+ co-doping

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In situ study on the thermal stability and interfaces properties of Er 2 O 3 /Al 2 O 3 /Si multi stacked films by X-ray photoelectron spectroscopy

Cited by 4 publications

References 19 publications

Simultaneously Achieving Colossal Permittivity, Ultralow Dielectric Loss Tangent, and High Insulation Resistivity in Er-Doped SrTiO3 Ceramics via Oxygen Vacancy Regulation

Simultaneously Achieving Colossal Permittivity, Ultralow Dielectric Loss Tangent, and High Insulation Resistivity in Er-Doped SrTiO3 Ceramics via Oxygen Vacancy Regulation

Application convenient and energy-saving mechano-optics of Er3+-doped X2O2S (X = Y/Lu/Gd) for thermometry

Reinforced near-infrared compatible absorption performance of Er4Al2O9 based on Sm3+/Dy3+ co-doping

Contact Info

Product

Resources

About

Simultaneously Achieving Colossal Permittivity, Ultralow Dielectric Loss Tangent, and High Insulation Resistivity in Er-Doped SrTiO₃ Ceramics via Oxygen Vacancy Regulation

Simultaneously Achieving Colossal Permittivity, Ultralow Dielectric Loss Tangent, and High Insulation Resistivity in Er-Doped SrTiO₃ Ceramics via Oxygen Vacancy Regulation

Application convenient and energy-saving mechano-optics of Er³⁺-doped X₂O₂S (X = Y/Lu/Gd) for thermometry