2018
DOI: 10.1016/j.actamat.2018.07.055
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In situ Synchrotron X-Ray diffraction study of high-temperature stress relaxation in chromia scales containing the reactive element yttrium

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Cited by 4 publications
(5 citation statements)
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“…24.b indicate that there is no increase of stress, due to the protection of oxide layer formed at 1273K, which proves that the oxide layer formed at high temperature prevents the formation of oxide layer at low temperature. This phenomena has been discussed in previous works [12]. In the present work, a full model is applied that leads to the same conclution, which comfirms that the oxide layer did not increase when temperature jumps were applied towards lower values.…”
Section: Analysis Of the ƒ "… (Pa -1 S -1 ) Results For The Yttria-co...supporting
confidence: 89%
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“…24.b indicate that there is no increase of stress, due to the protection of oxide layer formed at 1273K, which proves that the oxide layer formed at high temperature prevents the formation of oxide layer at low temperature. This phenomena has been discussed in previous works [12]. In the present work, a full model is applied that leads to the same conclution, which comfirms that the oxide layer did not increase when temperature jumps were applied towards lower values.…”
Section: Analysis Of the ƒ "… (Pa -1 S -1 ) Results For The Yttria-co...supporting
confidence: 89%
“…To determine the elementary mechanisms that govern the viscoplastic behavior of the oxide layer as a function of the amount of yttria deposited, the growth mechanism of the thin oxide layer should be considered at the same time [12]. It is known that the growth mechanism of the thin chromia oxide layers becomes anionic when a sufficient quantity of a reactive element is introduced; the formation of the oxide layer is thus controlled by the internal diffusion of oxygen along the diffusion short-circuits, i.e.…”
Section: Analysis Of the ƒ "… (Pa -1 S -1 ) Results For The Yttria-co...mentioning
confidence: 99%
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