In situ TEM observations of ion irradiation damage in boron carbide

Amorphization Mitigation in Boron-Rich Boron Carbides Quantified by Raman Spectroscopy

“…Thus, melting occurs as a result of localized increases in temperature and pressure, which then quenches to form amorphous bands that are seen experimentally. This idea is similar to recent TEM work that surmises that amorphization from ion radiation begins as point defects that grow and propagate into amorphous bands [17].…”

“…The sudden failure of boron carbide under impact has been attributed to amorphization, the formation of nanometer-sized bands that form as a result of high stresses or impacts [6,7]. Amorphization has been observed under many various testing conditions, such as indentation [6,[8][9][10][11], scratching techniques [8,12], ballistic impact [7], plate impact testing [13], sufficient electric fields [14], laser shock compression [15], radiation exposure [16,17], and diamond anvil cell experiments [18].…”

Structural modifications of boron carbide irradiated by swift heavy ions

“…With SHI, these tracks appear only when a S e threshold is exceeded [28] but this threshold value remains unknown for B 4 C. The number of dpa at the boron carbide surface calculated with SRIM is near null for sulfur ions (0.008 dpa) and very low but not negligible for iodine ions (below 0.2 dpa). It has to be noted that no defect has been observed by Victor et al [16] as long as the damage was below 0.5…”

“…The amorphization is somewhat influenced by the insertion of Au ions in the B 4 C structure which could lower the amorphization threshold. This was put in evidence by the work of Victor et al [16] who have shown that amorphization only induced by ballistic collisions (with almost no insertion of ions in the structure) starts only around 7.5 dpa. However, if we consider the whole neutron spectrum during reactor operation, the fastest neutrons can reach up to 10 MeV energy, and their interactions with matter can induce electronic excitations whose effects in B 4 C have been very few studied.…”

Defect-induced B4C Electrodes for High Energy Density Supercapacitor Devices

“…Different types of defects in boron carbide can be introduced during the manufacturing process 15,16 , may form during the heat treatment of the samples 17,18 , can be generated under speci c operating conditions where the samples subjected to high pressure and shear deformation [19][20][21][22] or upon irradiation with neutrons or different wavelengths of light [23][24][25][26][27] .…”