In-situ Thermal resistance measurement of GaN HEMTs

Abstract

The electrical method allows for quick, non-destructive, and accurate thermal resistance assessment in power devices. However, in practical engineering applications, the presence of decoupling capacitors affects the acquisition of the in-situ thermal resistance of the devices. Therefore, periodic thermal resistance monitoring requires repeated disassembly of the devices, which can introduce new reliability issues. This paper employs an operational circuit design to develop a method for in-situ thermal resistance measurement. The feasibility of this method is validated through the analysis of static and dynamic characteristics.