In-situ Tuning of the Electric Dipole Strength of a Double Dot Charge Qubit: Charge Noise Protection and Ultra Strong Coupling

Scarlino, P.; Ungerer, J. H.; Woerkom, David J. van; Mancini, M.; Stano, P.; Muller, C.; Landig, A. J.; Koski, J. V.; Reichl, C.; Wegscheider, W.; Ihn, T.; K., Ensslin,; Wallraff, A.

doi:10.48550/arxiv.2104.03045

Cited by 5 publications

(5 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We note that the interaction potential V ee is device-specific and cannot be altered in situ. Given a suitable gate pattern, the interaction matrix elements V ij , the local energy offsets ε i and nearest-neighbour hopping t ij may in principle still be tuned independently from one another [33]. For simplicity, we fix t and V 0 in our numerical simulation and treat them as constant for all distances R. Despite the fact that, in this way, we do not optimize the scaling parameter η for each R separately, we obtain a molecular binding curve with a pronounced minimum as shown in Fig.…”

Section: B Numerical Resultsmentioning

confidence: 99%

Long-range electron-electron interactions in quantum dot systems and applications in quantum chemistry

Knörzer,

van Diepen,

Hsiao

et al. 2022

Preprint

View full text Add to dashboard Cite

Long-range interactions play a key role in several phenomena of quantum physics and chemistry. To study these phenomena, analog quantum simulators provide an appealing alternative to classical numerical methods. Gate-defined quantum dots have been established as a platform for quantum simulation, but for those experiments the effect of long-range interactions between the electrons did not play a crucial role. Here we present the first detailed experimental characterization of long-range electron-electron interactions in an array of gatedefined semiconductor quantum dots. We demonstrate significant interaction strength among electrons that are separated by up to four sites, and show that our theoretical prediction of the screening effects matches well the experimental results. Based on these findings, we investigate how long-range interactions in quantum-dot arrays may be utilized for analog simulations of artificial quantum matter. We numerically show that about ten quantum dots are sufficient to observe binding for a one-dimensional H2-like molecule. These combined experimental and theoretical results pave the way for future quantum simulations with quantum dot arrays and benchmarks of numerical methods in quantum chemistry.

show abstract

Section: B Numerical Resultsmentioning

confidence: 99%

Long-range electron-electron interactions in quantum dot systems and applications in quantum chemistry

Knörzer,

van Diepen,

Hsiao

et al. 2022

Preprint

View full text Add to dashboard Cite

show abstract

“…21) . 35 Furthermore, the frequency detuning ω off ( ) depends strongly on the antisymmetric Zeemann term δω z , because the leading order -dependent term of both the Bloch-Siegert shift and the qubit splitting is proportional to δω z . Therefore, the damping rate increases significantly, when the g-factors are different in the quantum dots.…”

Section: Charge Noisementioning

confidence: 99%

Electrically driven spin resonance with bichromatic driving

György,

Pályi,

Széchenyi

2022

Preprint

View full text Add to dashboard Cite

Electrically driven spin resonance (EDSR) is an established tool for controlling semiconductor spin qubits. Here, we theoretically study a frequency-mixing variant of EDSR, where two driving tones with different drive frequencies are applied, and the resonance condition connects the spin Larmor frequency with the sum of the two drive frequencies. Focusing on flopping-mode operation, we calculate the parameter dependence of the Rabi frequency and the Bloch-Siegert shift. A sharedcontrol spin qubit architecture could benefit from this bichromatic EDSR scheme, as it enables simultaneous single-qubit gates.

show abstract

“…In applications involving semiconductor qubits, the quality factors of high-impedance resonators are typically limited to ∼ 10 3 due to gate leakage [15,16]. Despite these relatively low quality factors, high-impedance resonators have realized important breakthroughs such as coherent coupling between a single photon and a single charge qubit [17,18], coherent spin-photon coupling [19][20][21][22][23] and distant resonant charge-to-charge [24] and spin-to-spin [25] coupling as well as rapid-gate based spin readout [26] and the demonstration of ultrastrong charge-photon coupling [27]. Impressively, the implemen-tation of high-impedance resonators with quality factors of ∼ 10 3 has enabled distant virtual-photon mediated charge-to-charge [24] and spin-to-spin [28] coupling.…”

Section: Introductionmentioning

confidence: 99%

Performance of high impedance resonators in dirty dielectric environments

Ungerer,

Sarmah,

Kononov

et al. 2023

EPJ Quantum Technol.

View full text Add to dashboard Cite

High-impedance resonators are a promising contender for realizing long-distance entangling gates between spin qubits. Often, the fabrication of spin qubits relies on the use of gate dielectrics which are detrimental to the quality of the resonator. Here, we investigate loss mechanisms of high-impedance NbTiN resonators in the vicinity of thermally grown SiO2 and Al2O3 fabricated by atomic layer deposition. We benchmark the resonator performance in elevated magnetic fields and at elevated temperatures and find that the internal quality factors are limited by the coupling between the resonator and two-level systems of the employed oxides. Nonetheless, the internal quality factors of high-impedance resonators exceed 103 in all investigated oxide configurations which implies that the dielectric configuration would not limit the performance of resonators integrated in a spin-qubit device. Because these oxides are commonly used for spin qubit device fabrication, our results allow for straightforward integration of high-impedance resonators into spin-based quantum processors. Hence, these experiments pave the way for large-scale, spin-based quantum computers.

show abstract

In-situ Tuning of the Electric Dipole Strength of a Double Dot Charge Qubit: Charge Noise Protection and Ultra Strong Coupling

Cited by 5 publications

References 42 publications

Long-range electron-electron interactions in quantum dot systems and applications in quantum chemistry

Long-range electron-electron interactions in quantum dot systems and applications in quantum chemistry

Electrically driven spin resonance with bichromatic driving

Performance of high impedance resonators in dirty dielectric environments

Contact Info

Product

Resources

About