In situ visualization of SiC physical vapor transport crystal growth

Wellmann, Peter J.; Herro, Ziad; Winnacker, A.; Püsche, Roland; Hundhausen, Martin; Masri, P.; Kulik, A.V.; Богданов, М. В.; Karpov, S. Yu.; Ramm, M.G.; Makarov, Yuri N.

doi:10.1016/j.jcrysgro.2004.11.253

Cited by 25 publications

(25 citation statements)

References 9 publications

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“…At present, most bulk SiC wafers for semiconductor application are grown by the physical vapor transport (PVT) method. This method needs extremely high temperature, sophisticated equipment and controlling techniques [2,3] so that attempts to find other alternatives never stop. Liquid phase technique as a minor method has also been continually explored since 1960's.…”

Section: Introductionmentioning

confidence: 99%

SiC crystal growth from transition metal silicide fluxes

Yang¹,

Wu²,

Gao³

et al. 2007

Cryst. Res. Technol.

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SiC crystal growth in transition metal silicide melts was investigated by using spontaneous infiltration and solution methods. In the infiltration experiments, SiC powder preforms were infiltrated with FexSiy (Fe3Si, Fe5Si3 and FeSi) and CoSi melts. The dissolution and precipitation of SiC led to SiC crystals growth in the infiltrated Fe5Si3 and CoSi melts, SiC particles coalescing in FeSi and free carbon precipitation in Fe3Si. In the solution experiments, carbon from the graphite crucible dissolved in and reacted with FeSi2 and Ti2.3Si7.7 to form SiC crystals. Scanning electron microscopy (SEM), X‐ray diffraction (XRD) and Raman scattering spectrometer were employed to investigate SiC crystals growth. Based on the investigation, the effect of solution content on the SiC crystal growth, the growth mechanisms in both methods and prototypes of the SiC crystals are also discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%

SiC crystal growth from transition metal silicide fluxes

Yang¹,

Wu²,

Gao³

et al. 2007

Cryst. Res. Technol.

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show abstract

“…The overstoichiometric silicon emanating from the source due to the incongruent evaporation of SiC erodes the crucible wall and transports carbon to the growth interface. This reaction supplies noticeable amount of carbon to the vapor and allows the crystal to grow at a lower Si/C ratio than the source can supply at a particular temperature [17,22,23,34].…”

Section: Article In Pressmentioning

confidence: 99%

Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth

Tupitsyn

Arulchakkaravarthi

Drachev

et al. 2007

Journal of Crystal Growth

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“…[11,21]. Flow of multicomponent gas mixture through the porous medium is considered within the Darcy-Brinkman-Forchheimer model (see, for instance, [22]).…”

Section: Mass Transport In the Powder Chargementioning

confidence: 99%

Advances in numerical simulation of wide-bandgap bulk crystal growth

Kulik¹

2007

Optical Materials

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In situ visualization of SiC physical vapor transport crystal growth

Cited by 25 publications

References 9 publications

SiC crystal growth from transition metal silicide fluxes

SiC crystal growth from transition metal silicide fluxes

Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth

Advances in numerical simulation of wide-bandgap bulk crystal growth

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