In situ X-ray analysis of solid/electrolyte interfaces: electrodeposition of Cu and Co on Si(111):H and GaAs(001) and corrosion of Cu3Au(111)

Morphology, structure, and magnetism of FeCo thin films electrodeposited on hydrogen-terminated Si(111) surfaces

“…The generation of Schottky contacts is in favor of a further reduction of metallic species on the already deposited nuclei and not on the uncovered zones. Therefore, a Volmer-Weber threedimensional growth mode is expected [8][9][10][11][12]18]. In a general way, we observe deposits with a rough morphology, consisting of juxtaposed aggregates.…”

“…Recently, different groups have demonstrated that plating solutions, including alternatives to the conventional Watts bath consisting of metal sulfate/chloride with boric acid as pH-controlling agent, can be used to grow Fe-group thin films and nanostructures on silicon surfaces. It is generally found that electrodeposition on semiconductors starts from surface defects and the growth itself follows a Volmer-Weber mode [8][9][10][11][12]. Thus, the granular growth, with grain size and homogeneity strongly dependent on the deposition conditions, makes it possible to obtain products from isolated nanoclusters to continuous films with uniform thickness.…”

In situ X-ray analysis under controlled potential conditions: An innovative setup and its application to the investigation of ultrathin films electrodeposited on Ag(111)

“…Then, the electrolyte was withdrawn so that only a thin layer of solution covered the electrode. Most of the electrochemical cells proposed for in situ measurements of aqueous systems refer to this original design [8][9][10][11][12][13][14][15][16]. This means that electrochemistry and X-ray measurements are carried out in two different steps, each of them requiring manual intervention.…”

Residual Stress, Defects, and Electrical Properties of Epitaxial Copper Growth on GaAs

“…14 Comparisons to vapor-deposited Cu have been carried out by in situ X-ray standing wave studies at a synchrotron. 5 Thermally evaporated Cu changes the GaAs͑001͒-͑2 ϫ 4͒ reconstruction after Ͻ0.5 monolayers ͑ML͒. Similar to the case of electrodeposited Cu, the first submonolayer of Cu coverage diffuses at room temperature into GaAs crystal and was confirmed for electrodeposition to occupy preferentially Gasubstitutional sites in a 2 nm thick, subsurface layer.…”

“…4 On single-crystalline Si surfaces, epitaxial electrodeposition of a metal is rarely reported except for H-terminated ͑111͒ surfaces. 5,6 In comparison, there are more reports of epitaxy on GaAs via electrodeposition, where the surface oxides are more easily controlled in aqueous electrolytes. [7][8][9][10][11][12][13] The growth of Cu on single-crystalline GaAs͑100͒ surfaces by electrodeposition in aqueous solutions occurs via progressive island nucleation and growth.…”