In situ X-ray diffraction study of the controlled oxidation and reduction in the V–O system for the synthesis of VO2 and V2O3 thin films

Rampelberg, Geert; Schutter, Bob De; Devulder, Wouter; Martens, Koen; Radu, Iuliana; Detavernier, Christophe

doi:10.1039/c5tc02553b

Cited by 61 publications

(42 citation statements)

References 50 publications

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“…This is in good agreement with the temperature range of 450−550°C previously reported to be optimal for this purpose. 44 The oxidation process requires an extended time of annealing at lower temperatures. For example, 1 h is needed when the annealing temperature is 300°C…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Visible Thermochromism in Vanadium Pentoxide Coatings

Kumar

Qadir

Maury

et al. 2017

ACS Appl. Mater. Interfaces

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OATAO is an open access repository that collects the work of Toulouse researchers and makes it freely available over the web where possible. ABSTRACT: Although di-vanadium pentoxide (V 2 O 5 ) has been a candidate of extensive research for over half a century, its intrinsic thermochromism has not been reported so far. Films of V 2 O 5 grown on silicon, glass, and metal substrates by metal organic chemical vapor deposition in this study exhibit a thermally induced perceptible color change from bright yellow to deep orange. Temperature-dependent UV− vis spectroscopy and X-ray diffraction allow the correlation between the reversible continuous red shift of the absorption and the anisotropic thermal expansion along the (001) direction, that is, perpendicular to the sheets constituting the layered structure. Furthermore, the possibility of tuning the thermochromic behavior was demonstrated via a chemical doping with chromium.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Visible Thermochromism in Vanadium Pentoxide Coatings

Kumar

Qadir

Maury

et al. 2017

ACS Appl. Mater. Interfaces

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“…Authors could evidence the coexistence of M2 and R phases in this temperature range, and show their comparable electrical resistivity49. Although it seems to be overlooked, the negative TCR above SMT is visible in results displayed in several reports294449. Jones et al 50.…”

Section: Resultsmentioning

confidence: 91%

“…Ideally, VO 2 films show 3–4 orders of magnitude resistivity change with a narrow hysteresis width of ΔT~ 3–4 K. Bulk single crystal offers slightly higher amplitude of resistivity change but is susceptible to breakdown after few cycles of switching between semiconducting and metallic phases27. Although, polycrystalline thin films withstand frequent cycling, they usually feature broad hysteresis and small amplitudes of resistivity change, due to the presence of high density of grain boundaries and grain-boundary defects232829. Sintering as-grown VO 2 films to decrease the density of grain boundaries is not conceivable for practical applications due to the high melting point of this phase (1970 °C).…”

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confidence: 99%

Electrical Switching in Semiconductor-Metal Self-Assembled VO2 Disordered Metamaterial Coatings

Kumar¹,

Maury²,

Bahlawane³

2016

Sci Rep

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As a strongly correlated metal oxide, VO2 inspires several highly technological applications. The challenging reliable wafer-scale synthesis of high quality polycrystalline VO2 coatings is demonstrated on 4” Si taking advantage of the oxidative sintering of chemically vapor deposited VO2 films. This approach results in films with a semiconductor-metal transition (SMT) quality approaching that of the epitaxial counterpart. SMT occurs with an abrupt electrical resistivity change exceeding three orders of magnitude with a narrow hysteresis width. Spatially resolved infrared and Raman analyses evidence the self-assembly of VO2 disordered metamaterial, compresing monoclinic (M1 and M2) and rutile (R) domains, at the transition temperature region. The M2 mediation of the M1-R transition is spatially confined and related to the localized strain-stabilization of the M2 phase. The presence of the M2 phase is supposed to play a role as a minor semiconducting phase far above the SMT temperature. In terms of application, we show that the VO2 disordered self-assembly of M and R phases is highly stable and can be thermally triggered with high precision using short heating or cooling pulses with adjusted strengths. Such a control enables an accurate and tunable thermal control of the electrical switching.

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“…For more details, the reader is redirected to previous work [17,18]. For more details, the reader is redirected to previous work [17,18].…”

Section: Experimental Methodsmentioning

confidence: 99%

Kinetics of Multi‐Step Redox Processes by Time‐Resolved In Situ X‐ray Diffraction

Buelens

Galvita

Poelman

et al. 2016

Chemie Ingenieur Technik

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The kinetics of redox reactions of iron oxide in oxygen carrier 50Fe2O3/MgAl2O4 are examined using different time‐resolved techniques. Reduction kinetics are studied by H2 temperature‐programmed reduction (H2‐TPR) monitored by time‐resolved in situ XRD. In contrast to conventional TPR, in situ XRD distinguishes the three‐stage reduction of Fe2O3 → Fe3O4 → FeO → Fe. It also shows that the oxidation of Fe → Fe3O4 by CO2 has no intermediate crystalline phases, explaining why its kinetics can easily be investigated by conventional CO2 temperature‐programmed oxidation (CO2‐TPO). A shrinking core model which takes into account solid state diffusion allows describing the experimental data.

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In situ X-ray diffraction study of the controlled oxidation and reduction in the V–O system for the synthesis of VO₂ and V₂O₃ thin films

Abstract: VO2 and V2O3 thin films were prepared during in situ XRD investigation by oxidation and reduction of V and V2O5. Films show up to 5 orders of magnitude resistance switching.

Cited by 61 publications

References 50 publications

Visible Thermochromism in Vanadium Pentoxide Coatings

Visible Thermochromism in Vanadium Pentoxide Coatings

Electrical Switching in Semiconductor-Metal Self-Assembled VO2 Disordered Metamaterial Coatings

Kinetics of Multi‐Step Redox Processes by Time‐Resolved In Situ X‐ray Diffraction

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