2013
DOI: 10.1016/j.jcrysgro.2012.09.028
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In situ X-ray measurements of MOVPE growth of InxGa1−xN single quantum wells

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Cited by 10 publications
(12 citation statements)
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“…In our previous work, a combination of X-ray CTR scattering and X-ray reflectivity (XRR) was used for investigation on the Ga 0.91 In 0.09 N single quantum well (SQW) structures with several monolayers (1 ML = 1/2 c-lattice constant) GaInN at 830 °C successfully. Within the error bars, the analysis results of XRR and X-ray CTR scattering spectra at 830 °C and at RT on the same sample matched well [9].…”
supporting
confidence: 62%
“…In our previous work, a combination of X-ray CTR scattering and X-ray reflectivity (XRR) was used for investigation on the Ga 0.91 In 0.09 N single quantum well (SQW) structures with several monolayers (1 ML = 1/2 c-lattice constant) GaInN at 830 °C successfully. Within the error bars, the analysis results of XRR and X-ray CTR scattering spectra at 830 °C and at RT on the same sample matched well [9].…”
supporting
confidence: 62%
“…Based on Vegard's law and Hooke's law, as described in Ref. [9] in detail, and interplanar crystal spacing equation, the indium composition of the fully strained InGaN is 0.114, and the fully relaxed InGaN is 0.135. For the fully strained In 0.114 Ga 0.886 N epilayer, the indium content is in very good agreement with X-ray CTR scattering measurement results for the fully strained SQW structure with the same growth condition.…”
Section: Resultsmentioning
confidence: 99%
“…1(b). As a result, the former could be used at room temperature (RT) and at growth temperatures before and after growth [9], whereas the latter could only be used at growth temperatures during crystal growth. In this study, the continuous in situ XRR measurement and the growth of the In 0.11 Ga 0.89 N epilayer were simultaneously started and stopped.…”
Section: Methodsmentioning
confidence: 99%
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