In-situ X-ray photoelectron spectroscopy analysis of the initial growth of CdS thin films by chemical bath deposition

Garza-Hernández, Raquel; Carrillo-Castillo, A.; Martínez-Landeros, V.H.; Martínez-Puente, Marcelo A.; Martínez‐Guerra, Eduardo; Aguirre-Tostado, F. S.

doi:10.1016/j.tsf.2019.04.003

Cited by 17 publications

(8 citation statements)

References 33 publications

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“…The second one at 68.45 eV is associated with the presence of Br in the MAPbBr 3 and CsPbBr 3 perovskite structures . The peak areas obtained from the deconvoluted peaks in Figure were used to determine the elemental composition for the different orbitals and milling times …”

Section: Resultsmentioning

confidence: 99%

“…76 The peak areas obtained from the deconvoluted peaks in Figure 3 were used to determine the elemental composition for the different orbitals and milling times. 80 During the investigation of the impact of the A site on the synthesis of CsPbBr 3 , we observed that the initial formation of the CsPbBr 3 perovskite occurs within 1 h. However, in the case of CsCdBr 3 , the formation of the perovskite takes a significantly longer time (t = 5 h). The slower formation rate of CsCdBr 3 compared to CsPbBr 3 can be attributed to two critical factors.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

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Decoding the Mechanisms of Room-Temperature Solid-State Synthesis of Halide Perovskites

Shekarnoush,

Fernandez-Izquierdo,

Aguirre-Tostado

et al. 2023

Chem. Mater.

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Room-temperature solid-state synthesis of halide perovskites is a simple, single-step, efficient, and cost-effective method to synthesize halide perovskite precursors that can be subsequently used to deposit thin films by using various techniques. Solid-state methods also reduce and, in some cases, eliminate additional time-consuming treatments and purification steps. Therefore, understanding the reaction mechanism is crucial to the controlled synthesis of various perovskite systems. This study explores the reaction mechanisms and associated kinetics of room-temperature solid-state halide perovskites synthesized by using a planetary ball-milling system. A CsPbBr 3 system (ABX 3 ) is used as a reference to study the exchange of A, B, and X sites with methylammonium (MA + ), Cd 2+ , and Cl − , respectively. Various characterization techniques, including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), ultraviolet−visible (UV−vis) spectroscopy, and field emission scanning electron microscopy (FESEM), are used to analyze the resulting materials at different reaction times. The findings highlight the significance of factors such as perovskite formation energy, the particle size distribution of precursors, bond dissociation energy, molecular weight of the A cation, and the size and mobility of the X − ion in influencing the mechanism and kinetics of the reactions. Furthermore, the conversion of precursors to perovskites is investigated using XPS, which provides valuable information on the chemical shifts of the precursors and perovskite materials and can serve as a reliable source for future studies.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Experimental Sectionmentioning

confidence: 99%

Decoding the Mechanisms of Room-Temperature Solid-State Synthesis of Halide Perovskites

Shekarnoush,

Fernandez-Izquierdo,

Aguirre-Tostado

et al. 2023

Chem. Mater.

Self Cite

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“…Readers can refer to section E in Supplementary Information where the growth mechanisms of some materials such as CdO, CdS, ZnS, PbSe and CuS are discussed in detail [145][146][147][148][149][150][151][152][153][154].…”

Section: Growth Mechanismsmentioning

confidence: 99%

“…In several cases, there are depositions that involve various growing mechanisms. Readers can refer to section E in Supplementary Information where the growth mechanisms of some materials such as CdO, CdS, ZnS, PbSe and CuS are discussed in detail [145-154].…”

Section: Kinetics Of Growthmentioning

confidence: 99%

The chemical process for materials deposition in aqueous solution: a review

Arias¹,

González-Chan

Várguez³

et al. 2022

Surface Engineering

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The material deposition in aqueous solution, also known as chemical bath deposition (CBD), is a well-established technique for the fabrication of semiconducting thin films. The success of the CBD technique is mainly based on the relatively easy implementation and operation requirements. The CBD has importantly contributed to the development of sensors, optical devices and solar cells applications. In this review, the origins and current state of the art of the CBD technique, the involved physicochemical processes, the growing mechanisms, and the analytical techniques for the estimation of optimal physicochemical conditions for the film deposition are discussed. Emphasis on authors' experience on CBD of CdS, ZnS, Zn (OH) 2 , and ZnO films are here highlighted, following methodologies for a high control of the deposited materials, such as the species distribution diagrams and the solubility curves.

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“…The mechanism governing the two growths is based on the interaction of hydroxide groups and metal−citrate complex with the absorber, with different growth times for each deposition. The first minutes of the growth are dominated by the formation of the hydroxides, 28 followed by the decomposition of stable complexes (Cd 3 (C 6 H 5 O 7 ) 2 ), with a formation constant of K f = 10 3.75 and the (Zn 3 (C 6 H 5 O 7 ) 2 ) with a complex formation constant of K f = 10 4.98 . 29 This difference in complexes constants marks a difference in the growth time for the ZnS and under the same growth conditions, having a higher value.…”

Section: ■ Theoretical Considerationsmentioning

confidence: 99%

CdS/ZnS Bilayer Thin Films Used As Buffer Layer in 10%-Efficient Cu₂ZnSnSe₄ Solar Cells

Hernández-Calderón¹,

Vigil‐Galán²,

Guc

et al. 2020

ACS Appl. Energy Mater.

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This work deals with the soda-lime glass/Mo/Cu2ZnSnSe4/CdS/ZnS/i-ZnO/ITO solar cells. CdS/ZnS bilayers were synthesized by chemical bath deposition (CBD) method as buffer layers for Cu2ZnSnSe4 (CZTSe) solar cells. The depositions were carried out by varying the deposition time of the CdS film, while keeping the deposition time of the ZnS film constant. The devices went from 7.2% efficiency in a reference device using CdS to 10% in a device including a thin film of ZnS. All devices were processed without any additional annealing treatment on CdS/ZnS layers. J–V, EQE, SEM, Raman, and C–V characterizations were performed to investigate the properties of the solar cells as a function of the thickness of the CdS layer and to shed light on the origin of influence of the ZnS layer to the device performance. Moreover, the influence of physical properties of the buffer bilayers on the electrical parameters of the solar cells are discussed by means of numerical simulation.

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In-situ X-ray photoelectron spectroscopy analysis of the initial growth of CdS thin films by chemical bath deposition

Cited by 17 publications

References 33 publications

Decoding the Mechanisms of Room-Temperature Solid-State Synthesis of Halide Perovskites

Decoding the Mechanisms of Room-Temperature Solid-State Synthesis of Halide Perovskites

The chemical process for materials deposition in aqueous solution: a review

CdS/ZnS Bilayer Thin Films Used As Buffer Layer in 10%-Efficient Cu₂ZnSnSe₄ Solar Cells

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In-situ X-ray photoelectron spectroscopy analysis of the initial growth of CdS thin films by chemical bath deposition

Cited by 17 publications

References 33 publications

Decoding the Mechanisms of Room-Temperature Solid-State Synthesis of Halide Perovskites

Decoding the Mechanisms of Room-Temperature Solid-State Synthesis of Halide Perovskites

The chemical process for materials deposition in aqueous solution: a review

CdS/ZnS Bilayer Thin Films Used As Buffer Layer in 10%-Efficient Cu2ZnSnSe4 Solar Cells

Contact Info

Product

Resources

About

CdS/ZnS Bilayer Thin Films Used As Buffer Layer in 10%-Efficient Cu₂ZnSnSe₄ Solar Cells