1987
DOI: 10.1049/el:19870301
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In 0.53 Ga 0.47 As PIN photodiode grown by MOVPE on a semi-insulating InP substrate for monolithic integration

Abstract: Dielectric-coated hemispherical dielectric resonator (DR) antennas fed by a microship line through a coupling slot are analyzed, The broadside TE,,, mode is studied, and the reciprocity theorem is applied in this analysis. In this case the dielectric-couted DR antennu can be uiewed as a series load at the slot position as seen by the microstrip line. The impedunce of this series load is calculated by using a Green's,function formulation, and the input impedance of the slot-coupled DR antenna can then be obtain… Show more

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Cited by 12 publications
(3 citation statements)
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“…When the photodiodc is inverse biased with an appropriate saturating voltage, the current density in the intrinsic region is defined as (1) where e is the charge of an electron, n , and n,, are the volume densities of the electron and hole in the intrinsic region, and u, and u,, are the saturated velocities of the electron and hole, respectively 131. The total photocurrent from the photodiode is 1 Z ( t ) = -///j(r, t ) dr 1 , 0 ( C T = intrinsic region), (2) where L is the thickness of the intrinsic layer, and u denotes the entire intrinsic region. To obtain a current delay function due to the carrier transit time across the depletion region, the p-i-n photodiode is supposed to be exposed to a very sharp optical pulse of unit energy.…”
Section: Motion Of Carriers In Intrinsic Regionmentioning
confidence: 99%
See 1 more Smart Citation
“…When the photodiodc is inverse biased with an appropriate saturating voltage, the current density in the intrinsic region is defined as (1) where e is the charge of an electron, n , and n,, are the volume densities of the electron and hole in the intrinsic region, and u, and u,, are the saturated velocities of the electron and hole, respectively 131. The total photocurrent from the photodiode is 1 Z ( t ) = -///j(r, t ) dr 1 , 0 ( C T = intrinsic region), (2) where L is the thickness of the intrinsic layer, and u denotes the entire intrinsic region. To obtain a current delay function due to the carrier transit time across the depletion region, the p-i-n photodiode is supposed to be exposed to a very sharp optical pulse of unit energy.…”
Section: Motion Of Carriers In Intrinsic Regionmentioning
confidence: 99%
“…Various DK antennas using slot coupling are thus worthy of investigation. In this article a new configuration of broadband slot-coupled hemispherical DR antennas coated with a dielectric material having a permittivity about half that of the DR antenna [2] is studied, where the dielectric coating serves as a transition between the wave inside the DR antenna and free space, and thus can increase the bandwidth of the antenna.…”
Section: Introductionmentioning
confidence: 99%
“…The PINFET receiver approach, using PIN photodiodes constructed from the InGaAs material, is most preferred in the h=1. 3 and 1.55 pm silica-based fiber low dispersion and low-loss windows. These photodiodes must have low capacitance and low dark current to achieve high sensitivity [l].…”
mentioning
confidence: 99%