In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain

Articles you may be interested inSelf-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors Appl. Phys. Lett. 104, 093509 (2014); 10.1063/1.4867262 High performance raised source/drain InAs/In0.53Ga0.47As channel metal-oxide-semiconductor field-effecttransistors with reduced leakage using a vertical spacer Appl. Phys. Lett. 103, 233503 (2013); 10.1063/1.4838660 Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metaloxide-semiconductor field-effect-transistors Appl. Phys. Lett. 100, 063505 (2012); 10.1063/1.3683472 dc and rf characteristics of self-aligned inversion-channel In 0.53 Ga 0.47 As metal-oxide-semiconductor fieldeffect transistors using molecular beam epitaxy-Al 2 O 3 / Ga 2 O 3 ( Gd 2 O 3 ) as gate dielectrics J. Vac. Sci. Technol. B 28, C3H14 (2010); 10.1116/1.3276442Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al 2 O 3 gate dielectric

show abstract

“…5,6,14 This finding allows us to form the metal S/D in a self-aligned manner like the salicide process in Si MOSFETs.…”

mentioning

confidence: 91%

In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

Kim

Yokoyama

Taoka

et al. 2012

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…One option for such regions is the silicide-like compound formed by solid state reaction between Ni and InGaAs; this approach holds also the advantage of self-alignment. [4][5][6][7] We have recently investigated this system electrically and showed a near ideal current-voltage behavior with a Schottky barrier height of 0.24 6 0.01 eV. 8 In x Ga 1Àx As based transistors with NiInGaAs S/D regions were investigated and found to function successfully with a very high peak velocity.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial NiInGaAs formed by solid state reaction on In0.53Ga0.47As: Structural and chemical study

Shekhter

Mehari

Ritter

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

Thin epitaxial layers of NiInGaAs formed by solid state reaction of Ni on (100) In0.53Ga0.47As are used as metal source and drain regions for In0.53Ga0.47As metal oxide field effect transistors. Here, the authors present a structural and chemical analysis of this phase. The stoichiometry of the layer was determined as Ni2In0.53Ga0.47As. Transmission electron microscopy revealed an abrupt interface and a detailed x-ray diffraction analysis showed that the layer is of a hexagonal lattice, which grows epitaxially with the orientation relations of {100}InGaAs||{100}NiInGaAs; ⟨011¯⟩InGaAs||[001]NiInGaAs. Only one domain can be observed in this epitaxial growth. Understanding the structure of these layers is a crucial step not only in their incorporation into InGaAs based devices but also a step toward novel devices.

show abstract

“…It shows good ohmic behavior on n-InGaAs and Schottky behavior on p-InGaAs. 25 The reaction between Ni and InGaAs was controlled by diffusion of Ni atoms into InGaAs during the thermal anneal. In the case of TiSi 2 and CoSi, the dominant diffusing species is Si.…”

mentioning

confidence: 99%

Reduction of Off-State Leakage Current in In0.7Ga0.3As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contact Metallization

Zhang

Guo

Lin

et al. 2011

Electrochem. Solid-State Lett.

Self Cite

View full text Add to dashboard Cite

In 0.7 Ga 0.3 As channel n-MOSFETs (metal-oxide-semiconductor field-effect transistors) with Si-doped S/D and self-aligned NiInGaAs contact were demonstrated for the first time. The salicide-like metallization process employed a direct reaction between Ni and Si-doped InGaAs, followed by the removal of the unreacted Ni. As compared with n-MOSFETs with metallic Ni-InGaAs S/D (i.e. no Si doping in S/D), n-MOSFETs with Ni-InGaAs contact formed on Si-doped S/D show significantly improved OFFstate current I OFF in the linear and saturation regions.III-V materials such as Indium Gallium Arsenide (InGaAs) and Indium Arsenide (InAs) have significantly higher electron mobility than Silicon (Si) and are attractive for future high speed low power logic applications. 1-12 High performance III-V MOSFETs require low source and drain (S/D) series resistance R S/D , which includes metal-semiconductor contact resistance. 13-18 To achieve low R S/D in III-V FETs, S/D engineering such as selective growth of in situ doped S/D materials 19-21 and self-aligned contacts have been employed. [17][18]21,22 Metallic S/D is another attractive option 23-26 and should preferably be self-aligned to the gate stack. InGaAs channel n-MOSFETs with self-aligned metallic Ni-InGaAs S/D have been demonstrated recently. 25,26 However, the n-MOSFETs with metallic S/D suffer from high leakage current at metal/semiconductor junctions in S/D regions, leading to high drain to source and drain to body leakage current. Low drain junction leakage is needed to achieve low standby power consumption.In this work, In 0.7 Ga 0.3 As channel n-MOSFETs with Si-doped S/ D and self-aligned Ni-InGaAs contact were demonstrated for the first time. The spacer-less metallization process is similar to salicidation and drives the diffusion of Ni into InGaAs for reaction to form a conductive material. S/D implant (Si) and dopant activation anneal were performed before the metallization to form n-InGaAs/ p-InGaAs junction. The n-MOSFETs with Si-doped S/D and NiInGaAs contact show significantly suppressed off-state current I OFF as compared with n-MOSFETs with metallic Ni-InGaAs S/D. Device FabricationThe fabrication process flow for In 0.7 Ga 0.3 As channel n-MOSFETs with self-aligned Ni-InGaAs contacts is summarized and illustrated in Fig. 1. 2-in. p-type (N A $1 Â 10 19 cm À3 ) InP wafer was used as starting substrates. A 500 nm thick In 0.53 Ga 0.47 As with p-type (Zn doped) doping concentration N A of 2 Â 10 17 cm À3 and a 20 nm thick In 0.7 Ga 0.3 As with N A of 2 Â 10 16 cm À3 were sequentially grown. After pregate cleaning using HCl and NH 4 OH solution, (NH 4 ) 2 S solution was used to passivate the In 03.7 Ga 0.3 As surface for suppression of surface oxidation. The sample was then quickly loaded into an atomic layer deposition (ALD) tool and $7 nm of Al 2 O 3 was deposited. TaN gate electrode (100 nm thick) was deposited by sputtering, patterned by optical lithography and etched by Cl 2 -based plasma.After gate stack formation, one batch of devices (implanted devices) w...

show abstract

In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain

Cited by 46 publications

References 18 publications

In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

Epitaxial NiInGaAs formed by solid state reaction on In0.53Ga0.47As: Structural and chemical study

Reduction of Off-State Leakage Current in In0.7Ga0.3As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contact Metallization

Contact Info

Product

Resources

About