In<sub>2</sub>O<sub>3</sub> Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications

Xu, Qianfan; Liu, Xingqiang; Wan, Boshun; Yang, Zheng; Li, Fangtao; Lu, Junfeng; Hu, Guofeng; Pan, Caofeng; Wang, Zhong Lin

doi:10.1021/acsnano.8b05604

Cited by 35 publications

(21 citation statements)

References 56 publications

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“…43 As shown in Fig. 5b, the SS of the In 2 O 3 NR FET device was determined to be 80 mV per decade, which is close to the limit of 60 mV per decade of the conventional MOSFETs 44,45 and is the highest performance when compared to previously reported values for nanoribbon based In 2 O 3 FETs ( Table 1). The low SS value achieved for In 2 O 3 NR FETs is attributed to the systematically optimized fabrication process that allows the deposition of ultra-low surface roughness indium oxide thin lm with uniform composition and dimensions 46,47 as well as the on-chip integration of the gate electrode.…”

Section: Electrical Characteristics Of the In 2 O 3 Nr Fetssupporting

confidence: 76%

High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication

2019

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Section: Electrical Characteristics Of the In 2 O 3 Nr Fetssupporting

confidence: 76%

High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication

2019

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“…EQE is calculated as

EQE = R h c / e λ

where h is Planck's constant, e is the electron charge, λ is the illumination wavelength, and c is the speed of light. [ 29 ] The values of R and EQE under wavelengths varied between 915 and 1550 nm at a V DS of 5 V, are depicted in Figure S13c of the Supporting Information. The maximum R and its corresponding EQE were obtain 915 nm and were 2.9 A W −1 and 397%, respectively.…”

Section: Figurementioning

confidence: 99%

An Integrated Flexible All‐Nanowire Infrared Sensing System with Record Photosensitivity

et al. 2020

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investigated in the past few years. [11][12][13][14][15][16] For example, Hu and co-workers fabricated IR detectors based on parallel GaSb NW arrays that exhibited a photosensitivity of 4.5 with rise and decay times of 195.1 and 380.4 µs, respectively. [13] Many of IR detectors have been recently built on various 2D semiconducting nanostructures with varying photosensitivities, response speeds, etc. However, the performance of such devices, especially in terms of photosensitivity, is still quite low and cannot meet practical requirements. [17][18][19] To enhance the photosensitivity and enable the performance to reach a suitable level for commercial IR detector and imaging systems, [20] external amplification circuits are often utilized to improve the processing efficiency and image recognition rate. [21,22] However, the complex circuits of such IR systems, including IR detectors, external amplifiers, and processing units, introduce challenges with respect to power consumption, device integration, and noise processing. Therefore, new and highly compacted integrated IR systems with on-chip amplifying units are highly desirable for large-scale implementation and fault-tolerant processing in IR imaging.In this work, a simple and highly integrated IR detection amplification (IRDA) system was designed for high-performance IR imaging applications. A Ga-doped In 2 O 3 NW-based field effect transistor (FET) was integrated into a flexible all-NW IRDA system, and was found to enhance the photosensitivity of the system by several orders of magnitude. The resulting system exhibited a high photosensitivity, external quantum efficiency (EQE), and detectivity under 1342 nm light irradiation, with values as high as 7.6 × 10 4 , 1508%, 4.9 × 10 12 Jones, respectively. Furthermore, the contrast imaging of 1342 nm IR light in a 10 × 10 device array was significantly improved by integrating the IRDA system. As a proof-of-concept, the IRDA system array is used here to increase the accuracy and processing efficiency of subsequent image recognition by artificial neural network (ANN) training. These results suggest that an all-NW based IRDA system has significant potential for application in future flexible IR imaging technologies.Visual perception is an important part of human perception, providing an essential bridge between human beings and external information. [23] To simulate and expand the functionality of human vision, it is critical to obtain clear image information. Generally, the human retina detects visual Infrared (IR) photodetectors are a key optoelectronic device and have thus attracted considerable research attention in recent years. Photosensitivity is an increasingly important device performance parameter for nanoscale photodetectors and image sensors, as it determines the ultimate imaging quality and contrast. However, photosensitivities of state-of-the-art lowdimensional nanostructure-based IR detectors are considerably low, limiting their practical applications. Herein, a biomimetic IR detection amplification (IRDA)...

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“…However, the BTBT field‐effect transistors (FETs) typically show low On‐currents; while there are large number of subthermionic tunnel FETs reported in the literature, the recent ones based on 2D dichalcogenides demonstrate particularly high performance . An alternative approach to achieve subthermionic transport, originally proposed by Salahuddin and Datta and later experimentally demonstrated by various research groups, deals with concept that can actually reduce the body factor to values less than 1. This involves stabilizing a negative capacitance regime by placing a ferroelectric and dielectric layer in series to comprise the MOS capacitor.…”

mentioning

confidence: 99%

Concurrent Subthermionic and Strong Thermionic Transport in Inkjet‐Printed Indium Zinc Oxide/Silver Hybrid‐Channel Field‐Effect Transistors

Behera

Devabharathi

Pradhan

et al. 2019

Adv Elect Materials

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Here, the first term, V GS S ψ ∂ ∂ , known as the "body factor", cannot be less than 1 for standard MOSFET electrostatics, and the second term log I ( ) S 10 D ψ ∂ ∂ that is equals ln(10) β K T q and is 60 mV dec −1 at room temperature, determines the minimum limit of the subthreshold swing for the thermionic emission over the Boltzmann barrier. This in turn defines the steepness/slope of the transfer curves, the signal gain and the dynamic power dissipation of the electronic switches. One way to circumvent this limit is to allow tunneling through the barrier; in this case band-to-band-tunneling (BTBT) would be required as single career tunneling cannot lead to subthermionic transport. [2] However, the BTBT field-effect transistors (FETs) typically show low Oncurrents; while there are large number of subthermionic tunnel FETs reported in the literature, [3][4][5][6][7][8][9][10][11][12][13] the recent ones based on 2D dichalcogenides demonstrate particularly high performance. [2,14,15] An alternative approach to achieve subthermionic transport, originally proposed by Salahuddin and Datta [16] and later experimentally demonstrated by various research groups, [16][17][18][19][20][21][22][23][24][25][26][27] deals with concept that can actually reduce the body factor to values less than 1. This involves stabilizing a negative capacitance regime by placing a ferroelectric and dielectric layer in series to comprise the MOS capacitor. In this case, the Boltzmann activation barrier remains intact; however, an artificial voltage amplifier or step-up transformer is created using the sharp switching of the dipoles (i.e., exploiting the square-shaped P-E loop) of the ferroelectric and thereby a faster change in Ψ S (surface potential) becomes possible, as compared to the applied ∂V GS . However, in either of these approaches, specific requirements in terms of semiconductors (e.g., single sheet of 2D material), dielectrics or interfaces (e.g., ferroelectric/dielectric interface in case of negative capacitance (NC)-gate FETs) are there, which are certainly nontrivial to be replicated, when the complete device is to be solution processed/printed. Consequently, subthermionic transport Subthreshold slope of field-effect transistors (FETs) less than the fundamental Boltzmann limit (60 mV dec −1 at 300 K) is demonstrated either using band-to-band tunneling or negative capacitance (NC) ferroelectric-gate transistors. However, it is difficult to replicate both of these strategies in solution-processed/printed FETs. Nonetheless, it is shown that the use of a metal-insulator-metal-semiconductor architecture alongside electrolyte gating can simultaneously create highly reproducible static negative capacitance behavior in printed FETs, resulting in subthermionic transport for over four decades of drain currents with a subthreshold slope as low as 16 mV dec −1 , and thereafter a strong thermionic transport regime, characterized by an unprecedented On-current of 195 µA µm −1 , a transconductance of 215 µS µm, and a metal-like On-state res...

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In₂O₃ Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications

Cited by 35 publications

References 56 publications

High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication

High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication

An Integrated Flexible All‐Nanowire Infrared Sensing System with Record Photosensitivity

Concurrent Subthermionic and Strong Thermionic Transport in Inkjet‐Printed Indium Zinc Oxide/Silver Hybrid‐Channel Field‐Effect Transistors

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In2O3 Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications

Cited by 35 publications

References 56 publications

High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication

High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication

An Integrated Flexible All‐Nanowire Infrared Sensing System with Record Photosensitivity

Concurrent Subthermionic and Strong Thermionic Transport in Inkjet‐Printed Indium Zinc Oxide/Silver Hybrid‐Channel Field‐Effect Transistors

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In₂O₃ Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications