In₂S₃Buffer Layers for Cu(InGa)Se₂Solar Cells Fabricated by a Nanoparticle-Coating Approach

Abstract

A nanoparticle-coating approach is applied to prepare In2S3 buffer layers in Cu(InGa)Se2 solar cells for the first time. In this research, the electric and optical characteristics of the In2S3 films at different annealing temperatures are investigated. It is found that 275 °C is the optimum annealing temperature in our case and the highest efficiency of 10.0% solar cell is achieved at this temperature. The highest efficiency solar cell with the In2S3 buffer layer exhibits a higher light absorption in the region of 350–500 nm than the reference cell with a CdS layer.

Proposition and computational analysis of a kesterite/kesterite tandem solar cell with enhanced efficiency

“…However, the disposal and waste recycling process in CBD could be a matter of concern for industry. 22 Different types of hybrid buffer layer were also used to increase open circuit voltage and efficiency of kesterite solar cell. 23,24 Although noteworthy increases in PCE of kesterite solar cell have been achieved in recent years, further improvements are still required to enhance efficiency up to the level of CIGS solar cells and to increase the commercial viability of these types of photovoltaics.…”

In2S3 Thin Films via Open‐Air Chemical Vapor Deposition Using Indium‐Diethyldithiocarbamate: Deposition and Characterization

“…However, In 2 S 3 containing many sulfur defects may also exist as a cubic phase at room temperature. [19] The fabrication of In 2 S 3 thin films has been attempted using various methods, including CBD, [20,21] sputtering, [22] spray pyrolysis, [23] spray ion layer gas reaction, [24] nanoparticle coating, [25] physical vapor deposition, [11,26] metal-organic chemical vapor deposition, [27,28] and atomic layer deposition. [29] Herein, we propose a low-cost and facile method for the deposition of In 2 S 3 thin films: open-air chemical vapor deposition (CVD).…”