Thin films of the silver indium sulfide (AgIn 5 S 8 ) ternary semiconductor were prepared from acidic aqueous solutions containing silver nitrate, indium nitrate, and thioacetamide. Various preparative parameters, such as pH of the precursor solution, silver to indium concentration ratio [Ag]/[In], and postreaction thermal treatment conditions were changed in order to grow uniform and adherent thin films on glass substrates. A series of X-ray diffraction patterns and scanning electron micrographs were used to reveal the growth process over time. It was found that granular Ag 2 S primary films were first attached to the glass substrate, followed by the indium sulfide deposition. A (1 1 1) preferred oriented AgIn 5 S 8 with cubic spinel structure was obtained from the [Ag]/[In] ) 4 and pH 0.6 precursor solution after 673 K thermal treatment for 1 h in an Ar environment. A two-step deposition mechanism was proposed and discussed in terms of stability constants of metal complexes and classical nucleation theory. In addition, our preliminary study showed that 3-mercaptopropyl-trimethoxysilane (MPS)-modified glass substrates further promoted the homogeneity and adhesion of AgIn 5 S 8 thin films.